1988
DOI: 10.1051/jphyscol:1988496
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VERY LOW RESISTIVITY AuMn GATE OHMIC CONTACTS FOR GaInAs DIFFUSED JFETs

Abstract: For GaInAs/InP junction field effect transistors as well as heterojunction bipolar transistors, the achievement of very low resistivity P type ohmic contact is a very critical step because the Schottky barrier height on these materials is quite high. The realization of a highly doped P+ layer by Zn diffusion in a semi-closed box and the use of MnAu alloy contact have allowed to solve these difficulties : in fact, a contact resistivity as low as 10-7 Ω cm2 has been obtained

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Cited by 4 publications
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“…The contact resistivity of Pd/Sb(Zn) contacts is practically identical to the lowest values reported for Au-based metallizations on p-In 0.53 Ga 0.47 As; in the relevant doping range (2-4 × 10 -7 Ωcm 2 ). 4,5 The demonstrated stability of metallurgical and electrical properties for this metallization contrasts favorably to the behavior of Au-based contacts, which are inherently not in equilibrium with InGaAs. 5,8 Pd/Ge(Zn) contacts exhibit only slightly higher resistivities, i.e., 6-7 × 10 -7 Ωcm 2 , with resistivity and Zn diffusion depth, however, increasing moderately during thermal stressing.…”
Section: Discussionmentioning
confidence: 89%
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“…The contact resistivity of Pd/Sb(Zn) contacts is practically identical to the lowest values reported for Au-based metallizations on p-In 0.53 Ga 0.47 As; in the relevant doping range (2-4 × 10 -7 Ωcm 2 ). 4,5 The demonstrated stability of metallurgical and electrical properties for this metallization contrasts favorably to the behavior of Au-based contacts, which are inherently not in equilibrium with InGaAs. 5,8 Pd/Ge(Zn) contacts exhibit only slightly higher resistivities, i.e., 6-7 × 10 -7 Ωcm 2 , with resistivity and Zn diffusion depth, however, increasing moderately during thermal stressing.…”
Section: Discussionmentioning
confidence: 89%
“…In such a case, dopant-based metallizations as AuMn or Pd/Zn/ Au must be employed to achieve sufficiently low contact resistivities (ρ c ≤ 1 × 10 -6 Ωcm 2 ). 4,5 Here, drawbacks are the thermodynamic instability of such metallizaPd/Sb(Zn) and Pd/Ge(Zn) Ohmic Contacts on p-Type Indium Gallium Arsenide: The Employment of the Solid Phase Regrowth Principle to Achieve Optimum Electrical and Metallurgical Properties P. RESSEL, 1 The development of two metallizations based on the solid-phase regrowth principle is presented, namely Pd/Sb(Zn) and Pd/Ge(Zn) on moderately doped In 0.53 Ga 0.47 As (p = 4 × 10 18 cm -3 ). Contact resistivities of 2-3 × 10 -7 and 6-7 × 10 -7 Ωcm 2 , respectively, have been achieved, where both systems exhibit an effective contact reaction depth of zero and a Zn diffusion depth below 50 nm.…”
Section: Introductionmentioning
confidence: 97%