“…The contact resistivity of Pd/Sb(Zn) contacts is practically identical to the lowest values reported for Au-based metallizations on p-In 0.53 Ga 0.47 As; in the relevant doping range (2-4 × 10 -7 Ωcm 2 ). 4,5 The demonstrated stability of metallurgical and electrical properties for this metallization contrasts favorably to the behavior of Au-based contacts, which are inherently not in equilibrium with InGaAs. 5,8 Pd/Ge(Zn) contacts exhibit only slightly higher resistivities, i.e., 6-7 × 10 -7 Ωcm 2 , with resistivity and Zn diffusion depth, however, increasing moderately during thermal stressing.…”