“…In order to improve the performance of SB-MOSFETs, the carrier injection, which is determined by the Schottky barrier between the source and the channel, has to be improved. A reduction of the SB height can be achieved by Fermi level depinning with an insulator inserted between the metallic electrode and the semiconductor [4,5], low-SB silicides [6][7][8] as well as dopant segregation (DS) [2,3,9]. In this case, dopants piled-up at the silicide/silicon interface during DS form a thin highly doped layer which causes a strong band bending.…”