Very low voltage operation of p-Si/Al2O3/HfO2/TiO2/Al2O3/Pt single quantum well flash memory devices with good retention

Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

“…Memory devices with nano-crystals have been reported by several groups [9][10][11][12][13][14][15][16][17], but they have a uniformity problem. A single quantum well (HfO 2 /TiO 2 /Al 2 O 3 ) memory capacitor with a small memory window (∼1.6 V) has also been reported [18]. Silicon-nitride (Si 3 N 4 ) charge trapping layers in a poly-Si/SiO 2 /Si 3 N 4 /SiO 2 /Si (SONOS) memory structure have been studied extensively with poor retention and scaling issue [19,20].…”

Improved performance of GeON as charge storage layer in flash memory by optimal annealing

“…In order to simultaneously enlarge the memory window, lower the programming/erasing (P/E) voltages, increase the P/E speeds, and improve the charge retention, many dielectrics, e.g. HfO 2 [3], HfLaO x N y [4], HfON [5], TiO 2 [6], HfAlO [7], La 2 O 3 [8] and ZrON [9], have been investigated as CSL to replace Si 3 N 4 in MONOS-type flash memory devices. However, there is no work on Germanium Oxynitride (GeON) as CSL, which has been widely studied as the gate dielectric for Ge MOSFETs due to its higher permittivity, better thermal and chemical stability compared to the native oxide (GeO or GeO 2 ) [10,11].…”