Improved performance of GeON as charge storage layer in flash memory by optimal annealing

Peng, Lai

doi:10.1016/j.microrel.2012.06.112

Cited by 2 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, the retention characteristics of the device were still good even at 80% humidity, and the retention time was extrapolated to more than ten years. [38][39][40][41][42][43][44][45][46] These results are a clear indication that our device has high electrical stability. These results are a clear indication that the device has high electrical stability.…”

Section: Resultsmentioning

confidence: 83%

Highly Self‐Healable Write‐Once‐Read‐Many‐Times Devices Based on Polyvinylalcohol‐Imidazole Modified Graphene Nanocomposites

Kim

et al. 2021

Small

View full text Add to dashboard Cite

electrical properties, mass productivity, scalability, and high flexibility. [7][8][9][10][11][12][13][14][15][16][17][18][19] Table 1 lists and compares the basic performances of our device with those of typical devices explored in the past decade. According to the current research results, OBDs with reset voltages less than 3 V can be erased freely, so they are often referred to flash memories; on the other hand, those with reset voltage higher than 3 V are regarded as excellent candidates for ROMs because the recorded information cannot be easily erased. To distinguish them, we call OBDs that are expected to be used as ROMs write-once-read-many-times (WORM) devices. [9,11,14] In addition, compared with a three-terminal structure, a two-terminal structure allows vertical integration to be achieved more easily, which is expected to improve the memory capacity greatly. Such a prospect also makes two-terminal OBDs more and more worthy of in-depth study.Research results for three-terminal OBDs that can be selfhealed in a fracture state have been published. [20] However, the research on two-terminal self-healable OBDs is limited, to the best of our knowledge, to the healing of micro-cracks on their surfaces caused by repeated bending. Moreover, for use in wearable electronics, two-terminal OBDs must be able to resist or recover from damage caused by external impacts, but no results in this area, to the best of our knowledge, have been reported. In addition, the two-terminal self-healable OBDs have two key issues that are very worthy of attention. The first is the active layer, which determines the electrical properties of devices and can be healed spontaneously after damage. The second is whether the electrical properties of the devices remain unchanged after self-healing. [17,20] The recovery of the electrical properties of devices often depends on the intact repair of the active layer. [3] Therefore, if wearable electronic systems are to be repeatedly used for a long time, the materials in the active layers of two-terminal OBDs must have the capability to selfheal. To sum up, the research and development of two-terminal self-healable OBDs are of great significance if the practicability of wearable electronic systems is to be improved.In this paper, we present a two-terminal self-healable nanocomposite-based WORM device with excellent storage capability, flexibility, and electrical stability. Imidazole-modified graphene quantum dots (IMGQDs) were applied as fillers in a polyvinyl alcohol (PVA) polymer matrix. To demonstrate the device's stability for applications in wearable electronics, we Repetitious mechanical stress or external mechanical impact can damage wearable electronic devices, leading to serious degradations in their electrical performances, which limits their applications. Because self-healing would be an excellent solution to the above-mentioned issue, this paper presents a selfhealable memory device based on a novel nanocomposite layer consisting of a polyvinyl alcohol matrix and imidazole-modified g...

show abstract