Via Impact on the Upstream Electromigration of 40/45nm Low-k Cu Interconnect

Abstract

Via impact on the upstream electromigration (EM) of low-k Cu interconnects was investigated based on 40/45nm technology node. It is found that via height is the main factor to affect EM performance. Increasing via height can lead to more early failure. Besides, alloy seed layer and argon power during via deposition are also observed to be two important factors to affect EM lifetime.