Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

Qi, Zhengqing John; Rankin, Jed; Narita, Eisuke; Kagawa, M.

doi:10.1117/1.jmm.15.2.021005

Cited by 8 publications

(3 citation statements)

References 27 publications

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“…The decrease in height with the increase in the dwell time observed at 750 and 1200 μs ( Figure 15 ) compared to the height regime observed at 350 and 500 μs where with the increase in time, an increase in the structure height is observed corresponding to a beam-limited growth regime. 8 , 10 − 18 For an average 1 keV beam current, the dwell time limit to suppress the growth is set to around 700 μs. With applications in biomedical and biosensing applications, the SiO 2 frameworks enhanced with organic materials for mineralization of bone tissues and DNA 46 deposited at the nanoscale, and their growth and mineralization make the focus of highly increasing in importance studies on inhomogeneous (e.g., Au(111) substrate with defects) and homogeneous (perfect hcp lattice) substrate depositions.…”

Section: Resultsmentioning

confidence: 99%

Structural Analysis of Si(OEt)₄ Deposits on Au(111)/SiO₂ Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

et al. 2023

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The focused electron beam-induced deposition (FEBID) process was used by employing a GeminiSEM with a beam characteristic of 1 keV and 24 pA to deposit pillars and line-shaped nanostructures with heights between 9 nm and 1 μm and widths from 5 nm to 0.5 μm. All structures have been analyzed to their composition looking at a desired Si/ O/C content measuring a 1:2:0 ratio. The C content of the structure was found to be ∼over 60% for older deposits kept in air (∼at room temperature) and less than 50% for later deposits, only 12 h old. Upon depositing Si(OEt) 4 at high rates and at a deposition temperature of under 0 °C, the obtained Si content of our structures was between 10 and 15 atom % (compositional percentage). The FEBID structures have been deposited on Au(111)/SiO 2 . The Au(111) was chosen as a substrate for the deposition of Si(OEt) 4 due to its structural and morphological properties. With its surface granulation following a Chevron pattern and surface defects having an increased contribution to the changes in the composition of the final structure content, the Au(111) surface characteristic behavior at the deposition of Si(OEt) 4 is an increase in the O ratio and a reduction in the nanodeposit heights.

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Section: Resultsmentioning

confidence: 99%

Structural Analysis of Si(OEt)₄ Deposits on Au(111)/SiO₂ Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

et al. 2023

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“…[16][17][18][22][23][24][25][26][27][28][29][30][31][32] An X and/or Y translation of the full-chip design relative to the blank is essential, however, additional degrees of freedom can also be considered, such as 90-degree rotations, micro-rotations 30 , and mask floorplanning 22,29 . Previous work have shown that microrotations and floorplanning provides only slight improvements for defect avoidance, despite the considerable complexity and resource allocation needed for HVM implementation.…”

Section: Experimental Verificationmentioning

confidence: 99%

Defect avoidance for EUV photomask readiness at the 7 nm node

Rankin

Narita

et al. 2016

SPIE Proceedings

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Several challenges hinder extreme ultraviolet lithography (EUVL) photomask fabrication and its readiness for high volume manufacturing (HVM). The lack in availability of pristine defect-free blanks as well as the absence of a robust mask repair technique mandates defect mitigation through pattern shift for the production of defect-free photomasks. The work presented here provides a comprehensive look at pattern shift implementation to intersect EUV HVM for the 7 nm technology node. An empirical error budget to compensate for measurement variability and errors, based on the latest HVM inspection and write tool capabilities, is first established and then experimentally verified. The validated error budget is applied to 20 representative EUV blanks and pattern shift is performed on fully functional 7 nm node chip designs. The probability of defect-free masks is explored for various layers, including metal, contact, and gate cut layers. From these results, an assessment is made on the current viability of defect-free EUV masks and what is required to construct a complete defect-free EUV mask set.

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“…Jonckheere et al indicated that the defects in mask blanks with lateral dimensions exceeding half pitch should be avoided, as they can reduce mask imaging quality 9 . It had been summarized that the large defects should be removed directly, influence caused by moderate size defects can be mitigated using patterning shift techniques 10,11 , while small size multilayer defects can only be compensated by mask repairing to meet the imaging quality requirements 12 . As critical dimension of pattern decreases, the impact of small-sized defects becomes increasingly significant.…”

Section: Introductionmentioning

confidence: 99%

Inverse analysis of multilayer defects in EUV mask from the perspective of imaging performance

Li,

Dong,

Wei

2024

Optical and EUV Nanolithography XXXVII

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The defect in multilayer of mask blank can degrade the image quality in EUV lithography. It is caused by particles deposited under or inside the multilayer, which leads to deformation of the multilayer structure. This deformation can impact the reflectivity of the multilayer and cause amplitude changes and phase shifts, resulting in pattern shift or critical dimension error in EUV lithography imaging. In order to improve imaging performance, medium size defects can be mitigated by pattern shifting techniques, while small size multilayer defects can only be compensated by mask repair to meet the imaging quality requirements. Therefore, it is necessary to investigate the effect of defect size on lithography imaging performance. In this work, we evaluate the impact of conformal defect with different sizes on the imaging of three classical test patterns: Line Space, Tip to Tip, and Tip to Line. By representing the defect by using ℎtop, 𝑤top, ℎbot, and 𝑤bot, the defects on different central and edge positions in the arc slit of exposure field are investigated. Then, the data gathered from lithography simulation is used to model the parameters of defect and the imaging result indicators such as CD. The corresponding relationship between the defect size and the imaging CD is derived through a mathematical model. From the constrains of the lithography imaging performance indicators, the tolerance of the parameter of the multilayer defect is further predicted inversely.

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Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

Cited by 8 publications

References 27 publications

Structural Analysis of Si(OEt)₄ Deposits on Au(111)/SiO₂ Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

Structural Analysis of Si(OEt)₄ Deposits on Au(111)/SiO₂ Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

Defect avoidance for EUV photomask readiness at the 7 nm node

Inverse analysis of multilayer defects in EUV mask from the perspective of imaging performance

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Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

Cited by 8 publications

References 27 publications

Structural Analysis of Si(OEt)4 Deposits on Au(111)/SiO2 Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

Structural Analysis of Si(OEt)4 Deposits on Au(111)/SiO2 Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

Defect avoidance for EUV photomask readiness at the 7 nm node

Inverse analysis of multilayer defects in EUV mask from the perspective of imaging performance

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Structural Analysis of Si(OEt)₄ Deposits on Au(111)/SiO₂ Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

Structural Analysis of Si(OEt)₄ Deposits on Au(111)/SiO₂ Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition