Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math>

Udvarhelyi, Péter; Thiering, Gergő; Morioka, Naoya; Babin, Charles; Kaiser, Florian; Lukin, Daniil M.; Ohshima, Takeshi; Ul-Hassan, Jawad; Són, Nguyên Tiên; Vučković, Jelena; Wrachtrup, Jörg; Gali, Ádám

doi:10.1103/physrevapplied.13.054017

Cited by 68 publications

(107 citation statements)

References 40 publications

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“…Note added. Recently, we became aware of similar research into the vibronic states of the silicon vacancy qubits in SiC [73]. This work applies other experimental and theoretical methods to arrive at an estimate of the DW factor very similar to the estimate in this paper, which speaks in favor of the validity of both approaches.…”

Section: Discussionsupporting

confidence: 52%

Local vibrational modes of Si vacancy spin qubits in SiC

et al. 2020

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Silicon carbide is a very promising platform for quantum applications because of the extraordinary spin and optical properties of point defects in this technologically friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply microwave-assisted spectroscopy to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence line shape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine-learning algorithms. This allows us to identify the dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. A resonance phonon energy of 36 meV and a Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical, and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other threeand two-dimensional materials.

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Section: Discussionsupporting

confidence: 52%

Local vibrational modes of Si vacancy spin qubits in SiC

et al. 2020

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“…As expected, we find that Γ 0 0 remains nearly constant over the measured temperature range. The increase of γ 0 max is described by vibronic interaction of the V1 and V1' ESs 27 , which are separated by a relatively small energy gap of ΔE = 4.4 meV. As we detail in Supplementary Note 6, at the experimental temperatures, single acoustic phonon scattering processes cause pure dephasing with a rate given by…”

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confidence: 92%

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

et al. 2020

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Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system's intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system's spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

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“…The V Si occurs at two inequivalent lattice sites in the 4H-SiC lattice, denoted by h and k, with the zero-phonon lines at 861 and 916 nm, respectively. The properties of the defects are largely similar 39,40 ; one distinction is that the optical coherence of k-V Si is more robust against dephasing caused by acoustic phonons (characterized by narrower linewidths at elevated temperatures) 41 .…”

Section: Continuous-wave Scattering Off a Modulated Two-level Systemmentioning

confidence: 98%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

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Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in4H-SiC

Cited by 68 publications

References 40 publications

Local vibrational modes of Si vacancy spin qubits in SiC

Local vibrational modes of Si vacancy spin qubits in SiC

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

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