Violet laser emission in copper halides

Reimann, K.; Rübenacke, St.

doi:10.1063/1.357268

Cited by 8 publications

(4 citation statements)

References 9 publications

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“…With a view of resolving these problems, we are currently investigating a new material system based on Copper I Chloride (CuCl) on Si. The large excitonic binding energy of ∼190 meV [22,23] in CuCl guarantees the observation of excitonic recombination even up to room temperature and beyond [24]. In a similar fashion to ZnO but as opposed to GaN, high quality bulk single crystal CuCl can easily be grown.…”

Section: Introductionmentioning

confidence: 96%

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Lucas¹,

Mitra²,

McNally³

et al. 2007

J. Phys. D: Appl. Phys.

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CuCl is a I-VII semiconductor material with a direct band gap of ∼3.4 eV. It exhibits a zincblende structure (γ -phase) at low temperatures, up to ∼680 K. Unlike GaN, ZnO and related materials, CuCl has a relatively low lattice mismatch with Si (<0.4%) and a large excitonic binding energy (∼190 meV). This suggests the possibility of the fabrication of excitonic-based blue/UV optoelectronic devices on Si with relatively low threading dislocation densities. In this study, CuCl has been deposited and examined as a candidate material for the fabrication of these devices. X-ray diffraction (XRD) measurements confirmed that the deposited films were preferentially oriented in the (1 1 1) plane. Room temperature photoluminescence measurements reveal a strong Z 3 free exciton peak (3.232 eV). Both steady state dc and ac impedance spectroscopy experiments suggested that the deposited CuCl is a mixed ionic-electronic semiconductor material. An electronic conductivity of the order of 2.3 × 10 −7 S cm −1 was deduced to be in coexistence with Cu + ionic conductivity using irreversible electrodes (Au), while a total conductivity of the order of 6.5 × 10 −7 S cm −1 was obtained using reversible electrodes (Cu) at room temperature. Further to this, we have identified some of the challenges in fabricating an optoelectronic device based on a CuCl/Si hybrid platform and propose some possible solutions.

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Section: Introductionmentioning

confidence: 96%

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Lucas¹,

Mitra²,

McNally³

et al. 2007

J. Phys. D: Appl. Phys.

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“…It has been extensively studied in the form of micro-sized crystals embedded in various host matrices [7][8][9][10] and exhibits interesting properties such as large exciton binding energy of 190 meV compared to 60 meV in ZnO and 25 meV in GaN. Due to the large exciton binding energy strong exciton lasing action [11,12] has been observed at low temperature (around 2 K). It also exhibits a large bi-exciton binding energy of 34 meV [13,14] and biexciton lasing action from CuCl quantum dots embedded in NaCl matrix [10,15,16] has also been reported.…”

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confidence: 99%

Optical properties of CuCl films on silicon substrates

Mitra

O'Reilly

Lucas

et al. 2008

Physica Status Solidi (b)

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Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III‐Nitrides. However a large lattice constant difference between the III‐Nitride layers and compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ‐CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited CuCl films on Si(100) and Si(111) are studied using temperature dependent photoluminescence (PL) spectroscopy. Four peaks attributed to the free exciton (Z3) (3.203 eV), bound exciton (I1) (3.181 eV), bi‐exciton (M) (3.159 eV) and bound bi‐exciton (N1) (3.134 eV) are identified from the PL spectrum at 10 K. A free exciton peak at 3.230 eV is observed at room temperature. The binding energies for the bound exciton, bi‐exciton and bound bi‐exciton are determined. Parameters, extracted from the temperature dependence of the Z3 PL peak intensity, energy and line‐width, have been compared with CuCl films on different substrates and in single crystal form. The luminescence properties of the CuCl on Si material system are found to compare well with reports for single crystal CuCl. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…CuBr is a I–VII compound semiconductor material with great potential for short-wavelength applications due to its extremely large excitonic binding energy (∼108 meV) and direct band gap (∼3.1 eV at 300 K). − It exhibits good transparency (>80%) throughout the major portion of the visible region (above 420 nm) and shows strong absorption in the UV-violet region of the spectrum . Although, there are numerous reports on the excitonic and nonlinear optical properties of CuBr, − there are relatively few studies on the semiconducting properties of this material. − The poor hole conductivity of as-deposited (ASD) CuBr films represents a major limitation for the adoption of these materials, and thus the deposition of good quality CuBr films with increased p-type conductivity would be an extremely important development for future applications of this material system.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

Vijayaraghavan¹,

McCoy²,

Chauhan³

et al. 2014

J. Phys. Chem. C

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p-type transparent conducting CuBr thin films were grown by thermal evaporation of CuBr followed by oxygen plasma treatment. Efficient incorporation of oxygen into the CuBr films was revealed, and the influence of plasma exposure on the electrical, structural, optical, and electronic properties of CuBr films was investigated. Xray diffraction (XRD) analysis indicated the Zincblende structure of the oxygen plasma treated CuBr (OCB) films with the formation of nanocrystalline grains preferentially oriented along the (111) direction. p-type conducting OCB films show >85% average transmittance along with hole concentration, conductivity and Hall mobility values of ∼10 19 cm −3 , ∼1.5 S cm −1 and ∼0.45 cm 2 V −1 s −1 , respectively. The X-ray photoelectron spectra of the OCB films demonstrated that the plasma exposure resulted in a significant increase in the O 1s signal at the surface of OCB films. On the basis of the experimental results from the Hall measurements and X-ray photoemission, a possible explanation comprising the formation of a surface CuO layer is also proposed to elucidate the increase in the p-type conductivity of the OCB films. Strong room temperature emission of OCB films at around 416 nm was also observed, the intensity of which decreased with the increase of oxygen plasma exposure time. The results present oxygen plasma exposure as a simple and promising technique for the production of CuBr-based p-type materials for future transparent electronics.

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Violet laser emission in copper halides

Cited by 8 publications

References 9 publications

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

Optical properties of CuCl films on silicon substrates

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

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