Visible emissions near 1.9–2.2 eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy‐nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma‐assisted molecular beam epitaxy

“…In our samples, however, we observed no µ-PL emissions in the infrared wavelength region near 0.76-1.0 eV [3]. Visible emissions are rarely observed from our samples [6] although the reason has not been clarified. Therefore, the band-gap energy of 1.89 eV is very doubtful at the present stage, and the reason for this inconsistency requires detailed discussion.…”

InN: A material with photovoltaic promise and challenges

“…It is believed that the higher value is related to the presence of oxygen, previously thought to be present as an alloy. Although, more recently it has been suggested that a discrete oxynitride compound or compounds is a better interpretation than that of an alloy [6,[14][15][16]. During one series of experiments a vacuum window was slightly breeched resulting in a very small leak that raised the MBE system base pressure from $1 Â 10 À10 to $1 Â 10 À9 Torr over the course of several growths.…”

“…Annealing pure InN films in oxygen has determined that high-quality wurtzite InN has a strong affinity for incorporating oxygen into the crystal structure after thermal treatments in air [14,16]. Moreover, Davydov et al [6] state that samples saturated partially with oxygen show a shift towards higher bandgap energies than that of untreated InN.…”

Heteroepitaxial growth of InN layers on (111) silicon substrates

“…Therefore, it is highly desirable to deposit the InN layers on silicon substrates, which also has the potential for integrating InN electronic and optoelectronic devices with well-developed silicon microelectronic circuits. However, the investigation of InN growth on silicon substrate is still in its infancy though several groups have attempted to obtain InN layers on silicon substrates [6,7]. Yodo et al [6] have grown InN epilayers on (111) silicon substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy (MBE).…”

“…However, the investigation of InN growth on silicon substrate is still in its infancy though several groups have attempted to obtain InN layers on silicon substrates [6,7]. Yodo et al [6] have grown InN epilayers on (111) silicon substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy (MBE). Maleyre et al [7] have investigated the metalorganic vapor-phase epitaxy (MOVPE) growth of InN films onto different substrate materials, including sapphire and (111) silicon.…”