InN: A material with photovoltaic promise and challenges

PAMBE growth and in‐situ characterisation of clean (2 × 2) and (√3 × √3) R30° reconstructed InN(0001) thin films

“…The unique physical properties of the semiconductor indium nitride (InN) have a perspective for implementing this compound in optoelectronic, transistor and sensor applications as well as in solar cells [1,2] due to its small band gap [3,4], highest achievable drift velocity of all known semiconductor materials [5,6] as well as its extremely high electron mobility. Particularly, the possibility of producing high efficiency InN-based terahertz emitters facilitates a wide variety of applications [7,8].…”

Inducing a junction in n-type InxGa(1−x)N

“…11 Therefore, we propose an induced junction device that will use the polarization effects to invert a region of the n-type InGaN, creating a very thin (on the order of 10 nm) region of p-type material. The induced junction is created when electric fields from electrostatics or polarizations strongly bend the bands of an active material and invert the surface.…”

Stable passivation of InN surface electron accumulation with sulphur treatment

“…InN has the smallest electron effective mass, the largest mobility and highest peak and saturation velocities of the group IIInitrides and therefore, coupled with GaN, it has the potential to produce a variety of novel device applications, including radiation hard, high efficiency multi-junction solar cells [6,7], multi-colour detectors, high-brightness multicolour light emitting and laser diodes [8,9], quantum cryptography [10], and high electron mobility transistors [11]. Previously sulphur passivation has been found to reduce the downward band bending by 0.15 eV and decrease the surface sheet charge density by 30 % [12,13] and thus sulphur passivation can improve InN based device performance.…”