Light-driven
splitting of water to produce H2 and reduction
of molecular oxygen to synthesize H2O2 from
water are the emerging environmentally friendly methods for converting
solar energy into green energy and chemicals. In this paper, vacancy
defect and heterojunction engineering effectively adjusted the conduction
band position of Zn3In2S6, enriched
the electron density, broadened the optical absorption range, increased
the specific surface area, and accelerated the charge carrier transfer
and separation of g-C3N4/sulfur-vacancy-containing
Zn3In2S6 (CN/Vs-ZIS) heterostructures.
As a result, all of the CN/Vs-ZIS heterostructures possessed greatly
enhanced photocatalytic activities and the optimized sample 2CN/Vs-ZIS
exhibited the highest visible-light photocatalytic performance. The
rate of generation of H2 of 2CN/Vs-ZIS under visible light
(λ > 420 nm) was 6.55 mmol g–1 h–1, which was 1.76 and 6.06 times higher than those of Vs-Zn3In2S6 and g-C3N4, respectively,
and the apparent quantum yield (AQY) was 18.6% at 420 nm. Meanwhile,
the 2 h yield of H2O2 of 2CN/Vs-ZIS was 792.02
μM, ∼4.72 and ∼6.04 times higher than those of
pure Vs-Zn3In2S6 and g-C3N4, respectively. The enhanced reaction mechanisms for
the production of photocatalytic H2 and H2O2 were also investigated. This work undoubtedly demonstrates
that the synergistic effects of defect and heterojunction engineering
will be the great promise for improving the photocatalytic efficiency
of Zn3In2S6-based materials.