Visible-Light-Emitting Layered B<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>N Semiconductor

Watanabe, Mutsumi; Itoh, Satoshi; Sasaki, Takayoshi; Mizushima, Koichi

doi:10.1103/physrevlett.77.187

Cited by 175 publications

(90 citation statements)

References 19 publications

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“…Especially, theoretical and experimental investigations have indicated that visible light absorption and emission with tuneable wavelength can be achieved by controlling the carbon content in (B, N) rich BCN nanostructures, which then can be considered as metal-free light energy converters [33][34][35]. However, the study on this family of ternary photocatalysts is rather rare, although such materials fulfil basic requirements of photocatalysts, including being stable, visible-light responsive, and inexpensive.…”

Section: Science China Materialsmentioning

confidence: 99%

Photocatalytic water oxidation by layered Co/h-BCN hybrids

et al. 2015

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The search for new materials has progressed from metal-based photocatalysts to elemental semiconductors (C, Si, P, S, B) [11][12][13][14][15] and recently to metal-free binary materials and polymers, such as carbon nitride [16], boron carbide [17] and conjugated semiconductors [18][19][20]. These researches indicate that photon absorbing materials can be constituted by using lightweight elements such as carbon, nitrogen, and boron, opening up new opportunities for the selection of innovative and intriguing materials for artificial photosynthesis. It is of particular interest that some of these elements themselves (graphene [21], silicone [22]) or their combinations (h-BN, g-C 3 N 4 ) [23] can form layered structures with reduced thickness comparable to charge-diffusion distance, and thus if a semiconducting electronic structure was imparted in these materials, the fast separation of light-induced charge carrier would significantly benefit surface photoredox process that relied on the excitation and separation of electron-hole pairs and their subsequent participation in surface chemical reactions [24][25][26]. An interesting case of such a layered material is ternary h-BCN with tuneable ba nd gap energies between graphene (zero bandgap) and h-BN (bandgap = 5.6 eV) [27], which have the same atomic structure and share many similar properties. The hybridized phases of the two two-dimensional (2D) materials by atomic mixture of B, N, and C with broad composition ranges to create various layered semiconducting structures would produce new material functions complementary to graphene and h-BN, enabling a wide variety of electronic structures, applications and properties [28][29][30]. Such an emerging family of chemically inert and mechanically strong 2D materials practically allows the bandgap-engineered applications in heterogeneous photocatalysis by creating a medium-gap ternary semiconductor, in which the band gap, redox energy levels, p/n-type properties and surface acid-base chemistry can in principle be modulated by rational design and synthesis [31,32].A hexagonal boron carbon nitride (h-BCN) semiconductor was applied to intercalate cobalt ions to catalyze oxygen evolution reaction (OER) with light illumination, without using noble metals. The h-BCN with high specific surface area showed a strong chemical affinity towards metal ions due to the "lop-sided" densities characteristic of ionic B-N bonding, enabling the creation of metal/h-BCN hybrid layered structures with unique properties. As exemplified here by Co/h-BCN for water oxidation catalysis, after intercalating cobalt ions in the h-BCN host, the photocatalytic activity of the resultant layered hybrid is optimized due to their synergic catalysis that promotes charge separation and lowers reaction barriers. This finding promises a new nobel-metal-free nanocompsite using cost-acceptable and earth-abundant sust ances for photocatalytic OER, and enables the facile design of duel catalytic cascades by merging transition metal catalysis with h-BCN (photo)catalys...

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Section: Science China Materialsmentioning

confidence: 99%

Photocatalytic water oxidation by layered Co/h-BCN hybrids

et al. 2015

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“…Upon the intercalation, the observed corrugation of h-BC 2 N vanishes and an energy gap of 2 eV is now observed in the averaged STS data. It is worth noting that the theoretically predicted band gap is 1.6 eV for the most stable h-BC 2 N configuration 5,10,14 .…”

Section: Mixing and Demixing Of Bn And C Phases On Ru(0001)mentioning

confidence: 99%

“…The energy of the PL peak is assigned to BC 2 N (ref. 14) and corresponds well to the bandgap of B2 eV measured by the STS on the h-BC 2 N area. It is worth noting that on a pure h-BN film, no PL signal ( Supplementary Fig.…”

Section: Mixing and Demixing Of Bn And C Phases On Ru(0001)mentioning

confidence: 99%

“…The successful interfacing of these two isoelectronic materials to form hybrid monolayer film on Ru was also demonstrated by Sutter et al It is reported that the elimination of residual carbon adatoms is crucial to prevent unintentional intermixing of the G-BN interfaces 11 . In contrast to spatially segregated G-BN composite, intermixing of B, C and N atoms under thermodynamic non-equilibrium conditions may lead to semiconducting h-BC x N alloys 9,14,15 . However, the precise conditions needed to control the stoichiometries of well-mixed h-BC x N phases and the relation between crystallization and the ordering in such ternary two-dimensional (2D) alloy are far from understood.…”

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confidence: 99%

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Order–disorder transition in a two-dimensional boron–carbon–nitride alloy

et al. 2013

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Two-dimensional boron-carbon-nitride materials exhibit a spectrum of electronic properties ranging from insulating to semimetallic, depending on their composition and geometry. Detailed experimental insights into the phase separation and ordering in such alloy are currently lacking. Here we report the mixing and demixing of boron-nitrogen and carbon phases on ruthenium (0001) and found that energetics for such processes are modified by the metal substrate. The brick-and-mortar patchwork observed of stoichiometrically percolated hexagonal boron-carbon-nitride domains surrounded by a network of segregated graphene nanoribbons can be described within the Blume-Emery-Griffiths model applied to a honeycomb lattice. The isostructural boron nitride and graphene assumes remarkable fluidity and can be exchanged entirely into one another by a catalytically assistant substitution. Visualizing the dynamics of phase separation at the atomic level provides the premise for enabling structural control in a two-dimensional network for broad nanotechnology applications.

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“…The h-(BN) 1-x (C 2 ) x material system would complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials and appears to be highly promising for technologically significant photonic and electronic device applications. 4,7,8 This alloy system is also potentially important low-k interconnect material for next generation large scale integrated devices. 9 Bandgap tuning through compositional variation has been demonstrated recently in h-(BN) 1-x (C 2 ) x synthesized by metal-organic chemical vapor deposition (MOCVD).…”

Section: Introductionmentioning

confidence: 99%

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin

Doan

et al. 2014

AIP Advances

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The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN)1-x(C2)x alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN)1-x(C2)x alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm2/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C3H8)) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN)1-x(C2)x alloys n-type and corroborates the Hall-effect measurement results.

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Visible-Light-Emitting Layered BC2N Semiconductor

Cited by 175 publications

References 19 publications

Photocatalytic water oxidation by layered Co/h-BCN hybrids

Photocatalytic water oxidation by layered Co/h-BCN hybrids

Order–disorder transition in a two-dimensional boron–carbon–nitride alloy

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

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