important practical value to prepare photocatalytic materials with high activity under visible light.Indium oxide (In 2 O 3 ), a n-type semiconductor material, has a direct band gap of 3.8 eV and an indirect band gap of 2.8 eV [2]. It is an effective sensitizer and its absorption spectrum can extend from ultraviolet region to the visible region. It has been widely used in solar cells [3], flat panel display [4], gas sensor [5]. However, due to the high electron-hole recombination rate, the efficiency of In 2 O 3 is still limited. In order to improve the photocatalytic activity of In 2 O 3 , researchers have used a variety of methods, such as morphology control [6,7], metal deposition [8], and combining with semiconductors [9][10][11].Graphitic carbon nitride (denoted as C 3 N 4 ) is a kind of medium band gap (2.7 eV) nonmetal photocatalyst [12]. It has good chemical stability and thermal stability. Furthermore, it can be used to split water into H 2 and O 2 and degrade organic pollutants under visible light irradiation [13]. But high photoproduction electron-hole recombination rate seriously affects the catalytic properties of C 3 N 4 . C 3 N 4 can be easily adhered on the surface of other compounds due to its softness. Deferent types of strategies have been used to make the catalytic properties of C 3 N 4 better, including coupling with metals [14][15][16] [29]. Compared with the original semiconductor materials, the photocatalytic performance of these composites were enhanced obviously. Through mechanism analyzing, the reason for photocatalytic performance enhancements may be the improvement of electron-hole migration and separation.Recently, some investigations about In 2 O 3 /C 3 N 4 were reported. In 2 O 3 /C 3 N 4 composites can be used for hydrogen evolution