Visible photoluminescence from the annealed TEOS SiO2

Long-Lasting Hydrophilicity on Nanostructured Si-Incorporated Diamond-Like Carbon Films

“…The deconvoluted binding energies of C 1s and Si 2p are shown for the as-deposited Si-DLC films (2.66 at % Si) in Figure a. Figure a shows that the C 1s spectrum was composed of two peaks corresponding to the sp 2 (CC) and sp 3 (C−C) bonds at 284.4 and 285.5 eV, respectively. ,, The Si 2p spectrum was deconvoluted into three components with a strong peak for the Si−C bond at 100.5 eV and small peaks for the Si−C and SiO 2 bonding at 100.5 and 103.4, respectively. ,, For the as-modified Si-DLC film with nitrogen plasma, the C 1s spectrum (Figure b) was deconvoluted into several components for the host peaks of the CC and CN bonds at 284.4 and 285.7 eV, respectively, along with the small peaks for the C−C, CO, and Si−C bonds at 285.5, 288, and 282.4 eV. The Si 2p spectrum was also deconvoluted into three components for the host peak of the Si 3 N 4 bond at 102.3 eV and the small peaks for the Si−C and SiO 2 bonds at 100.5 and 103.4, respectively. , The spectrum of the Si 2p region indicated that the nitrogen plasma treatment reduced the Si−C bonded network, and the nitrogen removed a considerable amount of carbon and led to formation of the CN and Si 3 N 4 bonded networks on the surface.…”

“…21,28,29 The Si 2p spectrum was deconvoluted into three components with a strong peak for the Si-C bond at 100.5 eV and small peaks for the Si-C and SiO 2 bonding at 100.5 and 103.4, respectively. 21, 30,31 For the asmodified Si-DLC film with nitrogen plasma, the C 1s spectrum (Figure 3b) was deconvoluted into several components for the host peaks of the CdC and CdN bonds at 284.4 and 285.7 eV, respectively, along with the small peaks for the C-C, CdO, and Si-C bonds at 285.5, 288, and 282.4 eV. The Si 2p spectrum was also deconvoluted into three components for the host peak of the Si 3 N 4 bond at 102.3 eV and the small peaks for the Si-C and SiO 2 bonds at 100.5 and 103.4, respectively.…”

Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

“…Most publications to date have focused on the preparation of Si QDs embedded in amorphous SiO 2 or Si 3 N 4 matrices [1,8,9]. The typical preparation method involves the deposition of a single-layer Si-rich SiO 2 (or Si 3 N 4 ) or multi-alternating layers of Si-rich SiO 2 (or Si 3 N 4 )/quasistoichiometric SiO 2 (or Si 3 N 4 ) superlattice by chemical vapor deposition, and subsequent thermal annealing in the inert gas ambient in the quartz furnace at temperatures of up to 1100°C [1,8,9].…”

“…The typical preparation method involves the deposition of a single-layer Si-rich SiO 2 (or Si 3 N 4 ) or multi-alternating layers of Si-rich SiO 2 (or Si 3 N 4 )/quasistoichiometric SiO 2 (or Si 3 N 4 ) superlattice by chemical vapor deposition, and subsequent thermal annealing in the inert gas ambient in the quartz furnace at temperatures of up to 1100°C [1,8,9]. The plausible physical mechanism for the achievement of the Si QDs embedded in the SiO 2 (or Si 3 N 4 ) matrix in this method is due to the thermally activated phase separation and precipitation of Si nanocrystals in the matrix [7,9]. However, this method is a rather complicated process and is not compatible with the current thin-film silicon-based solar cell technology.…”