2022
DOI: 10.1007/s40242-022-2102-1
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Visualization of Ferroelectric Domains in Thin Films of Molecular Materials Using Confocal Micro-Raman Spectroscopy

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Cited by 6 publications
(3 citation statements)
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“…Combining Raman spectroscopy with confocal techniques enables probing the sample at different depths with resolution on the order of 1-2 µm. [105][106][107][108] However confocal measurement typically requires moving the probe relative to the sample which could limit inline use to stop-and-go type measurement.…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…Combining Raman spectroscopy with confocal techniques enables probing the sample at different depths with resolution on the order of 1-2 µm. [105][106][107][108] However confocal measurement typically requires moving the probe relative to the sample which could limit inline use to stop-and-go type measurement.…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…Polarizable metal-oxygen bonds [1] and strong correlations among localized valance electrons in transition metal oxides [2,3] have sparked intensive interest, and they have shown promise in optoelectronics [4][5][6][7], sensors [8][9][10][11] and catalysis [12][13][14][15]. As one of the correlated electronic oxides, VO 2 has several polymorphs, including VO 2 (R) [16], VO 2 (B) [17] and VO 2 (M) [18].…”
Section: Introductionmentioning
confidence: 99%
“…High-performance, high-integration, and low-power consumption are required and of great significance for promoting the development of existing information technologies. Electron–electron and electron–phonon interactions in IMT (e.g., Mott and Anderson transitions) have shown promise in emerging transistors for memory and logic processes beyond CMOS. Among transition metal oxides, VO 2 undergoes a reversible IMT from the low-temperature insulating monoclinic ( P 2 1 / c ) phase to the high-temperature metallic rutile ( P 4 2 / mnm ) phase across 340 K . Accompanied by abrupt electrical and optical changes, , the IMT in VO 2 has been placed at the forefront of exploitable technologies for smart windows, strain and gas sensors, , and even field-effect transistors …”
Section: Introductionmentioning
confidence: 99%