Visualization of the ion projected range region in GaAs irradiated with argon ions

Ion-plasma treatment of Cd1 − x Zn x Te (x ∼ 0.04) single crystals and application of antireflection diamond-like carbon films

“…The kinetic energy of Ar + heavy ions favors the cascade activation of the surface of semiconductors by an argon plasma. For instance, in GaAs the activation of surface chemical reactions was observed [18]; in CdZnTe, the competition of desorption and adsorp tion processes with the formation of TeO 2 took place [19]; and in CdHgTe, the activated processes were thermal heating, enhanced diffusion of interstitial mercury Hg 0 , and even the conversion of the conduc tivity type (p n) [20]. From the aforesaid it follows that the observed phe nomena in the disordered layer of the substrate may be due to both structural and chemical transformations during the treatment of the CdZnTe surface in the nonequilibrium gas plasma.…”

“…The vibration modes are identified according to[17][18][19] Note: δ s , ν s and δ as , ν as are the symmetric and asymmetric bending and stretching vibrations, respectively. Modes observed in the films are marked by +.…”