2016
DOI: 10.1088/1361-651x/aa51e5
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Void initiation from interfacial debonding of spherical silicon particles inside a silicon-copper nanocomposite: a molecular dynamics study

Abstract: Silicon particles with diameters from 1.9 nm to 30 nm are embedded in a face-centered-cubic copper matrix to form nanocomposite specimens for simulation. The interfacial debonding of silicon particles from the copper matrix and the subsequent growth of nucleated voids are studied via molecular dynamics (MD). The MD results are examined from several different perspectives. The overall mechanical performance is monitored by the average stress–strain response and the accumulated porosity. The ‘relatively farthest… Show more

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Cited by 18 publications
(12 citation statements)
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“…Delamination and crack growth via dislocation nucleation have been observed by other researchers in the past [30,51]. Similar to the thermally activated lattice-trapped delamination mode discussed above, dislocation nucleation is thermally activated.…”
Section: Dislocation Nucleationsupporting
confidence: 70%
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“…Delamination and crack growth via dislocation nucleation have been observed by other researchers in the past [30,51]. Similar to the thermally activated lattice-trapped delamination mode discussed above, dislocation nucleation is thermally activated.…”
Section: Dislocation Nucleationsupporting
confidence: 70%
“…Void nucleation has been studied in perfect crystals [15][16][17][18][19][20][21][22], at grain boundaries [23,24], ahead of crack tips [25], and at second-phase particles [26][27][28][29] using molecular dynamics. In most cases, void nucleation results from interactions between several crystallographic defects, such as grain boundaries and twins/dislocations [23,24], pairs of intersecting stacking faults [21], and particles and dislocations [26,27,30]. The previous work on particlemediated void nucleation is most relevant here.…”
Section: Introductionmentioning
confidence: 99%
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“…In addition, during the past few decades, researchers are keenly investigating nucleation, growth, and coalescence of void in fcc materials like copper, aluminium, and nickel [2][3][4]. The origin of the void is found as a consequence of debonding of the second phase particle or inclusions [5,6] or due to cluster formation by accumulating of vacancy atoms [7][8][9] during mechanical loading or unloading in the materials. It is noticed that vacancy diffusion cannot achieve void growth, and it is the dominant mechanism in the creep fracture.…”
Section: Introductionmentioning
confidence: 99%