Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer

Abstract

A study of the carbonization process and of a low temperature buffer layer on the Cubic Silicon Carbide (3C-SiC) epitaxial growth has been reported in this work. From this study it has been evidenced the importance of the C/H2 ratio and of the buffer layer process on the voids formation at the 3C-SiC/Si interface. From our study, the influence of the voids the wafer curvature is highlighted. It has been observed that decreasing the density of these voids, decreases the stress of the 3C-SiC film; consequently, the wafer curvature is reduced.