2018
DOI: 10.1039/c7cp07845e
|View full text |Cite
|
Sign up to set email alerts
|

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3−δ thin films investigated by chemical capacitance measurements

Abstract: Chemical capacitance measurements are used to study the defect chemistry of La0.6Sr0.4FeO3–δ thin films and their polarization (η) and pO2 dependence. Important point defects are oxygen vacancies (), electrons (e′) and holes (h˙).

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

12
97
0
1

Year Published

2018
2018
2023
2023

Publication Types

Select...
8

Relationship

4
4

Authors

Journals

citations
Cited by 46 publications
(110 citation statements)
references
References 43 publications
12
97
0
1
Order By: Relevance
“…The main advantage of this analysis relies on the fact that the defect concentrations can be tuned independently by either oxygen partial pressure or overpotential. More specifically, the defect concentrations are determined by the chemical potential of oxygen in the electrode μ O , which depends on the experimental parameters p O 2 and η according to 23,67 Here the oxygen chemical potential is referenced to 1 bar oxygen (μ O = 0 for 1 bar and η = 0 V). Hence, a certain defect chemical state can be established by different combinations of oxygen partial pressure and overpotential.…”
Section: Data Analysis and Discussionmentioning
confidence: 99%
“…The main advantage of this analysis relies on the fact that the defect concentrations can be tuned independently by either oxygen partial pressure or overpotential. More specifically, the defect concentrations are determined by the chemical potential of oxygen in the electrode μ O , which depends on the experimental parameters p O 2 and η according to 23,67 Here the oxygen chemical potential is referenced to 1 bar oxygen (μ O = 0 for 1 bar and η = 0 V). Hence, a certain defect chemical state can be established by different combinations of oxygen partial pressure and overpotential.…”
Section: Data Analysis and Discussionmentioning
confidence: 99%
“…This current is proportional to the change of the overpotential with time, which is characteristic for a capacitive current. Hence, we can introduce the chemical capacitance, which is a measure for how much the oxygen anion concentration in the GDC phase depends on the overpotential, and can be expressed by [46][47][48]…”
Section: Electronion Conduction and Electrochemical Reactions In A Pomentioning
confidence: 99%
“…Therefore, the expected chemical capacitance can be reliably predicted from literature data, as shown in Figure 10a. Moreover, for low-point defect concentrations where defect interactions are weak, the capacitance value can serve as a fingerprint for the concentration of oxygen vacancies and electronic defects [46][47][48]64], and reported values are largely reproduced within the literature.…”
Section: Chemical Capacitancementioning
confidence: 99%
“…Also temperature and p(O 2 ) dependent defect concentrations may cause a change for one and the same mechanism. 33 The complete evolution of the surface exchange resistance over the course of the experiments is visualized in Fig. 12.…”
Section: Comparison Of Oxygen Exchange Properties Measured In Situ (Pmentioning
confidence: 99%
“…For further discussion we may relate the chemical capacitance to the defect chemistry of the material. The capacitance of a lm with diluted defects can be interpreted with regard to the chemical composition according to: 33,39…”
Section: Chemical Capacitances Measured In Situ and Ex Situmentioning
confidence: 99%