Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

Yasuda, Hiroaki; Shimomura, N.; Ohsawa, Yoshiaki; Shirotori, S.; Kato, Y.; Inokuchi, T.; Kamiguchi, Y.; Altansargai, B.; Saito, Y.; Koi, K.; Sugiyama, H.; Oikawa, Shoko; Shimizu, Mitsuaki; Ishikawa, M.; Ikegami, Kazutaka; Kurobe, A.

doi:10.1109/iedm.2016.7838495

Cited by 54 publications

(20 citation statements)

References 5 publications

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“…[83,90,179,180] The other is that a gate structure can easily be incorporated into the third terminal. [181,182] This allows for the implementation of electric-gating-induced field-effect functions. In this chapter, we first discuss electric-field control of SOT switching, and then present the realization of spin logic devices capable of reconfigurable and complementary logic operations.…”

Section: Sot-based Spin Logic Applicationsmentioning

confidence: 99%

Current‐Induced Spin–Orbit Torques for Spintronic Applications

et al. 2020

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Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin–orbit torque (SOT), which originates from the spin–orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in‐plane current. SOT spearheads novel spintronic applications including high‐speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT‐based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field‐free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out‐of‐plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.

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Section: Sot-based Spin Logic Applicationsmentioning

confidence: 99%

Current‐Induced Spin–Orbit Torques for Spintronic Applications

et al. 2020

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“…Besides, STT and SOT switching still suffer from large switching current. This problem may be solved by employing the interplay of SOT and STT, or utilizing the voltage‐assisted SOT . Finally, strong DMI is required for skyrmion applications, which relies on material progress and novel phenomena such as voltage‐control of DMI.…”

Section: Discussionmentioning

confidence: 99%

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices

Peng

Zhu

Zhou

et al. 2019

Adv Elect Materials

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Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted considerable attention due to features such as nonvolatility, high scalability, low power, and high speed. Over the past few years, innovative materials and new structures in this field have resulted in the emergence of new phenomena and exciting device performance. It has been found that the heavy metal (HM)/ferromagnetic metal (FM) interface plays an essential role in spintronic devices. Spintronic device performance can be significantly enhanced through proper modulation of this interface. Recent progress in this blooming field is reviewed with specific emphasis on the HM/FM interface. Investigations into HM/FM-interface-related phenomena, including perpendicular magnetic anisotropy, tunnel magnetoresistance, magnetic damping, spin-orbit torque, and Dzyaloshinskii-Moriya interaction, are put into context. Guidelines for realizing high-performance spintronic devices are provided, and an outlook on their future research direction and potential applications is given.

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“…Although there are a few issues in VC-MRAM to be addressed for practical NV memory applications, the E-field effect on magnetic anisotropy itself becomes useful for spintronics-based NV memory. Yoda et al reported the possibility in reducing the memory cell size of SOT-MRAM by fabricating multiple MTJs on one channel layer, in which each MTJ can be independently switched by making use of E-field modulation of the magnetic anisotropy [94].…”

Section: Progress Of Vc-mrammentioning

confidence: 99%

A Recent Progress of Spintronics Devices for Integrated Circuit Applications

Endoh

Honjo

2018

JLPEA

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Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operation capability in addition to their high-endurance feature. There are three types of spintronics devices with different writing schemes: spin-transfer torque (STT), spin-orbit torque (SOT), and electric field (E-field) effect on magnetic anisotropy. The NV memories using STT have been studied and developed most actively and are about to enter into the market by major semiconductor foundry companies. On the other hand, a development of the NV memories using other writing schemes are now underway. In this review article, first, the recent advancement of the spintronics device using STT and the NV memories using them are reviewed. Next, spintronics devices using the other two writing schemes (SOT and E-field) are briefly reviewed, including issues to be addressed for the NV memories application.

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Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

Cited by 54 publications

References 5 publications

Current‐Induced Spin–Orbit Torques for Spintronic Applications

Current‐Induced Spin–Orbit Torques for Spintronic Applications

Modulation of Heavy Metal/Ferromagnetic Metal Interface for High‐Performance Spintronic Devices

A Recent Progress of Spintronics Devices for Integrated Circuit Applications

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