Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Ru, Guo-Ping; Meirhaeghe, R. L. Van; Forment, Stefaan; Jiang, Y. L.; Qu, Xin-Ping; Zhu, Shiyang; Li, Bing‐Zong

doi:10.1016/j.sse.2004.12.005

Cited by 39 publications

(39 citation statements)

References 19 publications

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“…Furthermore, the modified Richardson constant A * is comparable to theoretical value of n-type Ge [19]. This implies the barrier inhomogeneities in the interface of graphene/Ge SBD.…”

Section: Resultssupporting

confidence: 61%

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Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

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“…Furthermore, the modified Richardson constant A * is comparable to theoretical value of n-type Ge [19]. This implies the barrier inhomogeneities in the interface of graphene/Ge SBD.…”

Section: Resultssupporting

confidence: 61%

“…In this equation, the actual barrier height Ф B is less than Ф B0 due to image force lowering and other factors, and the term E a =q(Ф B -V F ) is called activation energy [19]. The value of the Ф B can be accurately extracted from the slope of the ln(I 0 /T 2 ) -1000 /T plot.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…Figure 6 shows the dependence of the activation energy E T on the field strength fitted with experimental values of Φ br on bias voltage extracted from [12,17]. As one can see, both the E T and Φ br vary with field strength in the same way.…”

Section: Apparent Barrier Height Dependence On Temperature and Bias Vmentioning

confidence: 84%

“…As a result, according to the authors of [13], the dominant barrier height will increase with the increase of the temperature and bias voltage. However, the apparent SBH as determined from I-V /T measurements, in general diminishes with the increase of bias [6][7][8][9][10][11][12].…”

Section: Experiments and Comparison With Theorymentioning

confidence: 94%

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Reverse-bias leakage in Schottky diodes

Pipinys¹,

Rimeika²,

Lapeika³

2007

Lithuanian J. Phys.

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Reverse-bias current-voltage (IR-V ) characteristics of Al-n / GaAs Schottky diodes have been studied in a temperature range from 92 to 333 K. The results are explained on the basis of phonon-assisted tunnelling model. It is shown that the temperature dependence of the reverse current IR could be caused by the temperature dependence of the electron tunnelling rate from traps in the metal-semiconductor interface to the conduction band of the semiconductor.Temperature-dependent IR-V data obtained by Zhang et al [J. Appl. Phys. 2006; 99: 023703] and Osvald et al [Microelectron. Eng. 2005; 81: 181] for Schottky diodes fabricated on n-GaN are reinterpreted in terms of a phonon-assisted tunnelling model. The temperature and bias voltages dependences of an apparent barrier height (activation energy) observed by other researchers are also explained in the framework of this model.

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TiO₂ Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Wang

Liang

Nie

et al. 2013

Part & Part Syst Charact

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Schottky junctions made from a titanium dioxide nanotube (TiO2NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO2NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W−1, 51, and 1.5 × 1012 cm Hz1/2 W−1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO2NT array/MLG film Schottky junction PD is elucidated.

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Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Cited by 39 publications

References 19 publications

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Reverse-bias leakage in Schottky diodes

TiO₂ Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

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Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

Cited by 39 publications

References 19 publications

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Reverse-bias leakage in Schottky diodes

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

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Product

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TiO₂ Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors