Voltage-Dependent Capacitance Extraction of SiC Power mosfets Using Inductively Coupled In-Circuit Impedance Measurement Technique

See, Kye Yak; Wang, Wensong; Chua, Eng Kee; Weerasinghe, Arjuna; Yang, Zhenning; Chen, Wayne

doi:10.1109/temc.2019.2914704

Cited by 31 publications

(11 citation statements)

References 22 publications

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“…The TD-TPS was first for time-variant in-circuit impedance monitoring of switching circuits [14]. It was later employed for voltage-dependent capacitances extraction of power semiconductor devices [8] and stator insulation faults detection of induction motors [17]. As shown in Fig.…”

Section: Time-domain Two-probe Setupmentioning

confidence: 99%

“…In-circuit impedance measurement plays an important role in many EMC applications [1]- [5]. Three in-circuit impedance measurement methods are widely used, namely the voltagecurrent (V-I) approach [6], the capacitive coupling approach [7] and the inductive coupling approach [8]. The measurement setups of the inductive coupling approach have no direct electrical contact with the energized system under test (SUT), thereby simplifying on-site implementation without posing electrical safety hazards.…”

Section: Introductionmentioning

confidence: 99%

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In-Circuit Impedance Measurement Setups of Inductive Coupling Approach: A Review

Fan¹,

Jie²,

Yang³

et al. 2022

Preprint

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In-circuit impedance measurement provides useful information for many EMC applications. The inductive coupling approach is a promising in-circuit impedance measurement method due to its non-contact characteristics and simple on-site implementation. Many measurement setups of this approach were reported. However, a comprehensive survey and comparison of these setups have not been found in the literature. This paper reviews these setups in terms of their characteristics, limitations, and applications. In addition, recommendations for future research are also presented.

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Section: Time-domain Two-probe Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In-Circuit Impedance Measurement Setups of Inductive Coupling Approach: A Review

Fan¹,

Jie²,

Yang³

et al. 2022

Preprint

Self Cite

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“…A compact behavioral model of SiC power MOSFETs was proposed in [9], where S-parameter measurements were used to parameterize the capacitance model C gs (V gs , V ds ) and C gd (V gs , V ds ). The bias tees used to measure S-parameters of on-state SiC MOSFETs in [9] were designed to a maximum current of 2 A, which limited the parameter extraction up to V gs ≈ 6 V. When using the Sparameter measurements, the influence of parasitics at higher frequencies has to be considered either by de-embedding the S-parameters of the package from the measurement results [9] or by performing the measurements at frequencies below 1 MHz [20]. Another approach of extracting the nonlinear voltage dependence of power MOSFET's C gs and C gd is by means of the dynamic I-V waveforms [5], [10], [17], [21].…”

Section: Mosfet Capacitances Characterization: State-of-the-artmentioning

confidence: 99%

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Stark

Tsibizov

Nain

et al. 2021

IEEE Trans. Power Electron.

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This paper presents a comprehensive analysis of non-linear voltage-dependent capacitances of vertical SiC power MOSFETs with lateral channel, focusing specifically on fast switching transients. The capacitance-voltage (C-V) device characteristics, (Cgs, C gd , C ds), being dependent on both Vgs and V ds , are extracted by means of two-dimensional Technology Computer Aided Design (TCAD) simulations for a commercially available device in both off-and on-state modes. Different compact models for the power MOSFET are investigated, each employing a three inter-terminal capacitance model as typically used in power electronics. The performed analysis provides a detailed explanation for the importance of taking into account the dependence of C gd , Cgs and C ds on both of the voltages Vgs and V ds. This is especially important for fast switching transients (in the range of 10 ns) in order to accurately predict switching losses, driver losses, current and voltage slopes, as well as current and voltage delays. As direct measurements for C gd , Cgs and C ds in dependence of both Vgs and V ds are highly demanding, the results presented in this paper increase the understanding of both the underlying effects as well as of the trade-offs between accuracy and computational complexity made by simplifying device models. In turn, this information is highly beneficial for enabling accurate and computationally efficient automated design procedures for power electronics.

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“…Taking into consideration the significance of the online impedance of electrical assets, the extraction of online impedance is now a notable process, thus, a few methods to extract the online impedance will be comprehensively examined with its integrity and limitations highlighted. The extraction methods can be categorized into three types, that is the voltage-current measurement method [8][9][10][11][12][13], capacitive coupling method [14][15][16] and lastly, the inductive coupling method [17][18][19][20][21][22].…”

Section: Section II Literature Review Of Online Impedance Measurementmentioning

confidence: 99%

Two-Probe Setup with Improved Calibration for Online Impedance Measurement of Electrical Assets

Chou¹

2021

Preprint

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<p>The online impedance serves as one of the most crucial specification to evaluate the health status and efficiency of an electrical device or system. The inductive coupling technique is a preferred approach to measure the online impedance due to the ease of implementation of the circuit which has zero physical contact to the live electrical system. The existing inductive coupling method deployed to measure the online impedance of an electrical device under test (DUT) adopts two probes in total: an injecting inductive probe (IIP) and a receiving inductive probe (RIP). An open/short/load (OSL) calibration procedure is implemented to eradicate the ramifications of the probe-to-probe coupling, however, based on the assumption that the calibration criterions (shorted, open and 50Ω) are approximated to their theoretical values in a specified frequency range. Hence, any measurement with frequency outside the specified range (i.e. larger than 1 MHz) will not be accurate due to the frequency-dependent residual inductances and capacitances of the calibration model. To overcome the aforesaid limitation, this paper introduces an improved calibration procedure which is applicable for a wider frequency range which takes the frequency-dependent characteristics into consideration. With the two-probe measurement setup (TPMS), the adopted improved calibration procedure is introduced to eradicate the ramifications of the probe-to-probe coupling with the intention to refine the accuracy of the extracted online impedance.<a></a></p><p></p>

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Voltage-Dependent Capacitance Extraction of SiC Power mosfets Using Inductively Coupled In-Circuit Impedance Measurement Technique

Cited by 31 publications

References 22 publications

In-Circuit Impedance Measurement Setups of Inductive Coupling Approach: A Review

In-Circuit Impedance Measurement Setups of Inductive Coupling Approach: A Review

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Two-Probe Setup with Improved Calibration for Online Impedance Measurement of Electrical Assets

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