2020
DOI: 10.1109/tcpmt.2020.3021413
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Voltage-in-Current Latency Insertion Method for Diodes and MOSFETs

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Cited by 7 publications
(2 citation statements)
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“…To overcome this, a Newton-Raphson iteration is introduced to the process of solving the drain-source current. Such an idea has also been applied in the formulation of VinC LIM for diodes [25]. The general formula of the Newton-Raphson method is given by…”
Section: B Vinc Lim Formulation For Rpi Tft Drain-source Currentmentioning
confidence: 99%
See 1 more Smart Citation
“…To overcome this, a Newton-Raphson iteration is introduced to the process of solving the drain-source current. Such an idea has also been applied in the formulation of VinC LIM for diodes [25]. The general formula of the Newton-Raphson method is given by…”
Section: B Vinc Lim Formulation For Rpi Tft Drain-source Currentmentioning
confidence: 99%
“…In the second example, a single 7T1C cell, which makes up one of the color cells in an RGB pixel of an OLED display [25] and [27]. Two simulations are performed using this circuit.…”
Section: B 7t1c Pixel Cell Circuitmentioning
confidence: 99%