Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions

Nozaki, Takayuki; Shiota, Yoichi; Shiraishi, Masashi; Shinjo, Teruya; Suzuki, Y.

doi:10.1063/1.3279157

Cited by 250 publications

(188 citation statements)

References 28 publications

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“…The observation of MEC in magnetic tunnel junctions (MTJs) was first reported for MgO/FeCo junctions in [76]. The recent success of a change of magnetization direction in micro-fabricated MTJs which persists at room temperature signifies an important step towards possible applications of MEC [13].…”

Section: Tmr Measurements Of Fe/mgo/ni/cu(100) Tunnel Junctionsmentioning

confidence: 93%

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Magnetoelectric coupling at metal surfaces

et al. 2010

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Section: Tmr Measurements Of Fe/mgo/ni/cu(100) Tunnel Junctionsmentioning

confidence: 93%

“…These two studies were carried out in Osaka, Japan, in the group of Prof. Y. Suzuki. This group has already demonstrated the influence of an electric field on the anisotropy of ultra-thin films of Fe, FePd and FeCo [74,75,76] measurements. Thirdly, the system was studied with STM.…”

Section: Dynamics Of the Switchingmentioning

confidence: 99%

Magnetoelectric coupling at metal surfaces

et al. 2010

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“…5,6 The achievement of the VCMA effect in MgO-based MTJs 7 and the demonstration of high-speed responses, such as voltage-induced ferromagnetic resonance (FMR) excitation, 8,9 spin-wave excitation 10 and dynamic magnetization switching, [11][12][13][14] have brought great changes to research in this field. Modulations of the Curie temperature, 15 domain wall propagation, 16,17 interfacial Dzyaloshinskii-Moriya interaction 18 and proximity-induced magnetism 19 have also been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

et al. 2017

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Voltage control of spin enables both a zero standby power and ultralow active power consumption in spintronic devices, such as magnetoresistive random-access memory devices. A practical approach to achieve voltage control is the electrical modulation of the spin-orbit interaction at the interface between 3d-transition-ferromagnetic-metal and dielectric layers in a magnetic tunnel junction (MTJ). However, we need to initiate a new guideline for materials design to improve both the voltage-controlled magnetic anisotropy (VCMA) and perpendicular magnetic anisotropy (PMA). Here we report that atomic-scale doping of iridium in an ultrathin Fe layer is highly effective to improving these properties in Fe/MgO-based MTJs. A large interfacial PMA energy, K i,0 , of up to 3.7 mJ m − 2 was obtained, which was 1.8 times greater than that of the pure Fe/MgO interface. Moreover, iridium doping yielded a huge VCMA coefficient (up to 320 fJ Vm − 1 ) as well as high-speed response. First-principles calculations revealed that Ir atoms dispersed within the Fe layer play a considerable role in enhancing K i,0 and the VCMA coefficient. These results demonstrate the efficacy of heavy-metal doping in ferromagnetic layers as an advanced approach to develop high-density voltage-driven spintronic devices. NPG Asia Materials (2017) 9, e451; doi:10.1038/am.2017.204; published online 5 December 2017 INTRODUCTIONSpintronic devices, such as a magnetoresistive random-access memory device using a MgO-based magnetic tunnel junction (MTJ), 1,2 are expected to reduce the standby power of future computing systems by utilizing the non-volatile feature of magnetism. However, one significant challenge emerges from reducing the energy for information writing: magnetization switching. This issue is caused by electriccurrent-based operations of spintronic devices using electric-currentinduced magnetic fields, spin-transfer torque (STT) and spin-orbit torque based on the spin Hall effect rather than the electric-field-based operations presently used for semiconductor devices. For example, recent developments of STT-magnetoresistive random access memory have achieved~100 fJ per bit writing energies, 3 which corresponds to 10 7 k B T, where k B is the Boltzmann constant and T is the temperature (assumed to be 300 K here). In contrast, the energy required for maintaining magnetic information, that is, thermal stability, is between 60 k B T and 100 k B T. This large energy gap between data writing and retention, on the order of 10 5 , mainly originates

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“…Despite the limited penetration depth of an E-field in metals, the charge induced at the metal/dielectric interface on the topmost atomic layers is sufficient to modify the surface magnetic anisotropy energy (MAE) by a non negligible amount in ultrathin ferromagnetic layers as suggested by electronic structure calculations [9][10][11] . This has a particular impact in systems where the different anisotropy contributions almost cancel each other out, resulting in a large relative variation of the total effective MAE when the surface contribution is modified with the voltage [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] . We have studied here a Pt/Co/AlOx sample where the surface MAE could be varied in two ways : charging the metal/dielectric interface and modifying its oxidation.…”

mentioning

confidence: 99%

Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet

Bernand-Mantel

Diez

Ranno

et al. 2013

Applied Physics Letters

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The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material :controlling DW nucleation and stopping DW propagation at the edge of the electrode.The possibility of controlling magnetic properties with an E-field via magneto-electric (ME) effects was initially envisaged in multiferroïcs 1 or magnetic semiconductors 2 . As the majority of these materials loses their ferromagnetic properties at room temperature the recent discovery of

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Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions

Cited by 250 publications

References 28 publications

Magnetoelectric coupling at metal surfaces

Magnetoelectric coupling at metal surfaces

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet

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