In the field of spintronics, researchers have manipulated magnetization using spin-polarized currents. Another option is to use a voltage-induced symmetry change in a ferromagnetic material to cause changes in magnetization or in magnetic anisotropy. However, a significant improvement in efficiency is needed before this approach can be used in memory devices with ultralow power consumption. Here, we show that a relatively small electric field (less than 100 mV nm(-1)) can cause a large change (approximately 40%) in the magnetic anisotropy of a bcc Fe(001)/MgO(001) junction. The effect is tentatively attributed to the change in the relative occupation of 3d orbitals of Fe atoms adjacent to the MgO barrier. Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.

Single-walled carbon nanotubes (SWNTs) have strong potential for molecular electronics, owing to their unique structural and electronic properties. However, various outstanding issues still need to be resolved before SWNT-based devices can be made. In particular, large-scale, air-stable and controlled doping is highly desirable. Here we present a method for integrating organic molecules into SWNTs that promises to push the performance limit of these materials for molecular electronics. Reaction of SWNTs with molecules having large electron affinity and small ionization energy achieved p- and n-type doping, respectively. Optical characterization revealed that charge transfer between SWNTs and molecules starts at certain critical energies. X-ray diffraction experiments revealed that molecules are predominantly encapsulated inside SWNTs, resulting in an improved stability in air. The simplicity of the synthetic process offers a viable route for the large-scale production of SWNTs with controlled doping states.

No abstract

We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier.Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 m and 1.3 ns by the Hanle-type spin precession, respectively.

A voltage-induced perpendicular magnetic anisotropy change in an ultrathin FeCo layer was observed in an epitaxial magnetic tunnel junction (MTJ) structure. A spin-transfer induced ferromagnetic resonance measurement technique was used under various bias voltage applications to evaluate the anisotropy change. From the peak frequency shifts, we could estimate that a surface magnetic anisotropy change of 15 μJ/m2 was induced by an electric field application of 400 mV/nm in the MTJ with a 0.5 nm thick FeCo layer. The realization of voltage-induced anisotropy changes in an MTJ structure should have a large impact on the development of electric-field driven spintronic devices.