Volume plamon dispersion of polycrystalline films of the ternary semiconductors ZnSnAs₂ and ZnSiAs₂

Investigation and use of plasmon losses in energy‐filtering transmission electron microscopy

“…The true plasmon loss in a material can be displaced to higher and lower values than this by interband transitions of bound electrons below and beyond AEpl, respectively (Raether, 1980). Thus, the actual plasmon energy observed depends on the chemical composition in binary and ternary alloys (Cundy et al, 1968a, b;Spalding & Metherell, 1968;von Festenberg, 1969;Bernert 81 Zacharias, 1972;Schluter, 1972;Muller & Otto, 1980;Grundler, 1987) and can be used for local compositional analysis. When the plasmon losses are sharp with half-widths of a few electron volts, displacements in their maxima of the order of 0.1-0.2 eV can be detected.…”