W-band GaAs Gunn diodes with high output power

Szubert, J.M.; Barstow, J. M.; Beall, R B; Harris, J. J.

doi:10.1016/0038-1101(90)90216-2

Cited by 8 publications

(1 citation statement)

References 5 publications

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“…Szubert et al have compared the performance of W-band GaAs Gunn structures with flat and graded doping profiles [25]. The graded structures showed improved performance compared to flat doped structures with a similar N x L product, where N repre-sents the doping and L the length of the active region.…”

Section: Graded Doping Profilementioning

confidence: 99%

D-band (110–170 GHz) InP gunn devices

Kamoua

Eisele

Haddad

1993

Solid-State Electronics

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This paper reports on the development of InP Gunn sources for operation in the D-band (li0-170GHz). n+-n-n + structures with flat doping as well as graded doping profiles have been considered. Oscillations were obtained at 108.3 GHz from a 1 #m structure with a uniform n doping of 2.5 x 1016cm-3. The CW RF output power was 33 roW. A 1 #m graded structure with an n doping increasing linearly from 7.5 x 10 ~5 to 2.0 x 10~6cm-3 has resulted in 20roW at 120GHz and 10roW at 136 GHz. These results are believed to correspond to a fundamental mode operation and represent the state-of-the-art performance from InP Gunn devices at these frequencies. This improvement in performance is attributed in part to a processing technique based on the use of etch-stop layers and lnGaAs cap layers. An etch-stop layer allows low-profile mesas (2-3/~m) and InGaAs cap layers help reduce the contact resistance, thus minimizing series resistances in the device. In addition, a physical model based on the Monte Carlo method was developed to aid in the design of structures for high frequency operation. Experimental results obtained from a 1.7#m Gunn device operating at W-band frequencies were used to estimate appropriate InP material parameters.

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Section: Graded Doping Profilementioning

confidence: 99%