W-band SPST transistor switches

Takasu, Hideki; Sasaki, Fumio; Kawasaki, Hiromu; Tokuda, Hirokuni; Kamihashi, S.

doi:10.1109/75.535830

Cited by 36 publications

(8 citation statements)

References 2 publications

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“…Another structure involves a series FET in parallel with an inductor. Such a switch has an isolation of 20 dB and an insertion loss of 1.6 dB at 94 GHz [4]. The parallel LC resonance structure, a capacitive stub and an inductor line, is another microwave switch structure.…”

Section: Introductionmentioning

confidence: 99%

Optimization and fully distributed analysis of traveling wave switches at millimeter wave frequency band

Khoshniyat

Moradi

Abdipour

et al. 2009

2009 First Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT)

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In this paper, a fully distributed model for a traveling wave switch is introduced and important parameters of the switch such as insertion loss, isolation, and return loss are presented. The results of fully distributed model are compared with the results of the semi-distributed model. These results have good agreement with semi-distributed results. By using the fully distributed model and adjusting the switch length and operating frequency, various switch parameters are calculated. The optimum switch length and operating frequency are calculated versus the switch parameters especially the isolation and the return loss in off and on conditions.

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Section: Introductionmentioning

confidence: 99%

Optimization and fully distributed analysis of traveling wave switches at millimeter wave frequency band

Khoshniyat

Moradi

Abdipour

et al. 2009

2009 First Conference on Millimeter-Wave and Terahertz Technologies (MMWaTT)

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“…The passive HEMT [or field-effect transistor (FET)] switches are still very popular since they are easy to fabricate with the HEMT monolithic-microwave integrated-circuit (MMIC) process and to integrate to other circuits on a single chip. Most passive HEMT switches were resonant-type FET switches [2], [3] with the isolation performance lower than 30 dB. There were some other approaches for passive HEMT switches to obtain good isolation at the cost of huge chip area, such as high-isolation -band HEMT switches reported in [4], utilized two-stage unterminated quarter-wavelength shunt design to achieve up to 50-dB isolation, and a switching low-noise amplifier (LNA) using Lange couplers [5].…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave MMIC passive HEMT switches using traveling-wave concept

Lin

Chen

et al. 2004

IEEE Trans. Microwave Theory Techn.

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This paper describes the design of millimeter-wave wide-band monolithic GaAs passive high electron-mobility transistor (HEMT) switches using the traveling-wave concept. This type of switch combined the off-state shunt transistors and series microstrip lines to form an artificial transmission line with 50-characteristic impedance. A 15-80-GHz single-pole double-throw (SPDT) switch in conjunction with quarter-wavelength impedance transformers demonstrates an insertion loss of less than 3.6 dB and an isolation of better than 25 dB. Another type of wide-band switch was designed by using a series HEMT switch to replace the quarter-wavelength transformer, and the operating band can be extended to dc. With this scheme, dc-80-GHz single-pole single-throw (SPST) and dc-60-GHz SPDT switches are also developed with compact chip size. From dc to 80 GHz, the insertion loss and isolation of the SPST switch are better than 3 and 24 dB, respectively. The SPDT switch has an insertion loss of better than 3 dB and an isolation of better than 25 dB from dc to 60 GHz. The analysis of circuit characteristics and design procedures are also included. It is concluded that the device periphery can be selected for the desired bandwidth, while the number of transistors is decided to achieve the isolation.Index Terms-High electron-mobility transistor (HEMT), switch, traveling wave.

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“…A straightforward but effective method is adding an inductor to resonate the parasitic drain-source capacitor of the turned-off MOS transistor [1], [2]. Numerous enhanced designs were reported for either achieving high power handling capability or low insertion loss [3]- [7].…”

Section: Introductionmentioning

confidence: 99%

An Internally-Matched High-Isolation CMOS SPDT Switch Using Leakage Cancellation Technique

Chang

Chih

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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An internally-matched single-pole double-throw (SPDT) switch with high isolation is presented. The high isolation is resulted from the leakage cancellation by employing a compensation circuit, which also achieves impedance match for all ports. The SPDT chip, implemented in a 0.18-m CMOS process, achieves a measured isolation of 72 dB, an insertion loss of 1.1 dB, return losses better than 10 dB at all ports and 1dB of 19.3 dBm at 1.9 GHz.

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W-band SPST transistor switches

Cited by 36 publications

References 2 publications

Optimization and fully distributed analysis of traveling wave switches at millimeter wave frequency band

Optimization and fully distributed analysis of traveling wave switches at millimeter wave frequency band

Millimeter-wave MMIC passive HEMT switches using traveling-wave concept

An Internally-Matched High-Isolation CMOS SPDT Switch Using Leakage Cancellation Technique

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