W-doping induced antiferroelectric to ferroelectric phase transition in PbZrO3 thin films prepared by chemical solution deposition

Abstract

We reported on W-doping induced antiferroelectric to ferroelectric phase transition in PbZrO3 (PZO) thin films prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. The phase transition has been studied through polarization-electric field hysteresis loop, capacitance-voltage characteristic, and Raman scattering measurements. Suitable amount W-doping increased the saturated polarization of antiferroelectric W-doped PZO thin films, whereas the ferroelectric W-doped PZO thin films exhibited higher dielectric constant with a high dielectric-bias voltage tunability of about 70%. With increasing W-doping content, the orientation of the thin films changed from preferred (111)Cubic to complete (100)Cubic, due to W-doping-induced lattice distortion, meanwhile the Curie temperature dropped, and dielectric maximum broadened. Our study demonstrates that W-doping is an effective way to tailor the electrical properties of PZO thin films through the induced antiferroelectric-ferroelectric phase transition.

Ab initio hybrid DFT calculations of BaTiO3, PbTiO3, SrZrO3 and PbZrO3 (111) surfaces

“…The PbZrO 3 thin films were deposited on Pt(111)/Ti/SiO 2 /Si substrates. Sa et al [33] reported the W-doping induced antiferroelectric to ferroelectric phase transition in PbZrO 3 thin films prepared on Pt/Ti/SiO 2 /Si substrates. With increasing W-doping content, the orientation of the thin films changed from preffered (111) Cubic to complete (100) Cubic , due to W-doping induced lattice distortion.…”

Unique dielectric tunability of Ag(Nb1−xTax)O3 (x = 0–0.5) ceramics with ferrielectric polar order

“…The dielectric constant and dielectric loss usually decrease with increasing the bias electric field for FE materials. 10,11 For AFE materials, however, they first increase before AFE-FE transition, and then decrease with further increasing the bias electric field. 11,12 So very interesting mixed behavior of FE-like and AFE-like tunable dielectric properties is expected for AgNbO 3 ceramics with FIE and its Ag(Nb 1Àx Ta x )O 3 analogues.…”

“…Furthermore, for an AFE material, even when the electric field is lower than AFE-FE transition field and not high enough for observing the characteristic double hysteresis loop, AFE-induced dielectric tunability can already be distinguished by the increase in dielectric constant and dielectric loss with bias electric field. 11,12 This is believed to ease the polar order determination of Ag(Nb 1Àx Ta x )O 3 ceramics, for which extremely high electric field is needed in case of hysteresis loop measurement. Although the FE-like dielectric tunability of AgNbO 3 and Nb-rich Ag(Nb 1Àx Ta x )O 3 ceramics has already been reported, the highest bias electric field was only 10 kV/cm.…”

“…It is well known that the dielectric constant and dielectric loss usually start to decrease rapidly with increasing the bias electric field for FE materials, while the dependences slow down under higher electric field. 10,11 On the contrary for AFE materials, when the maximum bias electric field is lower than the AFE-FE transition field, the dielectric constant and dielectric loss first increase slowly with increasing the bias electric field, and the dependences speed up under higher electric field. 11,12 As a result, for AgNbO 3 ceramics with FIE polar order that exhibits both FE-like and AFE-like response, the effect of AFE-like behavior is minor, and therefore FE-like dielectric tunability dominates when the maximum bias electric field is low (25 and 50 kV/cm).…”

“…10,11 On the contrary for AFE materials, when the maximum bias electric field is lower than the AFE-FE transition field, the dielectric constant and dielectric loss first increase slowly with increasing the bias electric field, and the dependences speed up under higher electric field. 11,12 As a result, for AgNbO 3 ceramics with FIE polar order that exhibits both FE-like and AFE-like response, the effect of AFE-like behavior is minor, and therefore FE-like dielectric tunability dominates when the maximum bias electric field is low (25 and 50 kV/cm). However, AFE-like dielectric tunability becomes significant for higher maximum bias electric field (75-125 kV/cm), and the competition between FE-like and AFE-like behavior finally results in the unique tunable dielectric properties of AgNbO 3 ceramics.…”