Fabrication and energy-storage performance of (Pb,La)(Zr,Ti)O3 antiferroelectric thick films derived from polyvinylpyrrolidone-modified chemical solution J. Appl. Phys. 112, 034105 (2012); 10.1063/1.4742128Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films

We reported on W-doping induced antiferroelectric to ferroelectric phase transition in PbZrO3 (PZO) thin films prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. The phase transition has been studied through polarization-electric field hysteresis loop, capacitance-voltage characteristic, and Raman scattering measurements. Suitable amount W-doping increased the saturated polarization of antiferroelectric W-doped PZO thin films, whereas the ferroelectric W-doped PZO thin films exhibited higher dielectric constant with a high dielectric-bias voltage tunability of about 70%. With increasing W-doping content, the orientation of the thin films changed from preferred (111)Cubic to complete (100)Cubic, due to W-doping-induced lattice distortion, meanwhile the Curie temperature dropped, and dielectric maximum broadened. Our study demonstrates that W-doping is an effective way to tailor the electrical properties of PZO thin films through the induced antiferroelectric-ferroelectric phase transition.

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