Wafer level reliability and leakage current modeling of PZT capacitors

Percolation theory applied to PZT thin films capacitors breakdown mechanisms

“…However, reliability issues of PZT capacitors concerning the physical mechanisms involved in Time-Dependent Dielectric Breakdown (TDDB) are not well understood so far. In this work, we investigate the TDDB mechanisms in PZT capacitors under Constant Voltage Stress (CVS) test considering a percolation approach, in agreement with the statistical behavior of PZT capacitors times to breakdown (t bd ) [2]. Percolation theory is a real breakthrough in the understanding of the statistical nature of ultra-thin oxide breakdown [3].…”

High pass filter with above IC integrated SrTiO3 high K MIM capacitors

“…This temperature is compatible with the transistor technology as proved for example with the realization of an acceleration sensor by Polla et al in the middle 1990s [3]. More recently, ST claims integration of PZT capacitors with diodes underneath [4]. Besides, the well-known development of ferroelectric memories (FRAM) often utilizes PZT which is typically crystallized at 700°C [2].…”

Electrical conduction mechanisms in piezoelectric ceramics under harsh operating conditions

“…Conductivity also develops over a period of time at high temperature due to vacancy and defect migration [7]. If the d.c. electric field is removed, the piezoelectric materials can recover their dielectric strength as oxygen vacancies migrate from the cathode interface back to the bulk material [8]. However, these conduction mechanisms do not explain the changes in electrical resistance in humid atmospheres where rapid changes in conductivity occur at much more moderate temperatures (around room temperature) in a variety of materials including PZT monolithic [5,9] and multilayer [10,11] actuators, Barium Titanate capacitors [12] with Nickel [5,9] and Silver [10][11][12] based electrodes.…”