Wafer Nanotopography Effects on CMP: Experimental Validation of Modeling Methods

Lee, Brian; Boning, Duane S.; Baylies, Winthrop A.; Poduje, Noel; Hester, Pat; Xia, Yong; Valley, J. F.; Koliopoulus, Chris; Hetherington, Dale L.; Sun, Hong Jiang; Lacy, Michael G.

doi:10.1557/proc-671-m4.9

Cited by 9 publications

(8 citation statements)

References 2 publications

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“…Experimental data used here is taken from previously reported studies on nanotopography [1]. The experiment consists of 8 identical sets of 200 mm epi wafers, each set containing wafers with five different nanotopography signatures.…”

Section: Experimental Description and Simulation Resultsmentioning

confidence: 99%

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Modeling and Mapping of Nanotopography Interactions with CMP

Lee

Boning

Baylies³

et al. 2002

MRS Proc.

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As the demand for planarity increases with advanced IC technologies, nanotopography has arisen as an important concern in shallow trench isolation (STI) chemical mechanical polishing (CMP) processes. Previous work has shown that nanotopography, or small surface height variations on raw wafers 20 to 50 nm in amplitude extending across millimeter scale lateral distances, can result in substantial CMP-induced localized thinning of surface films such as oxides or nitrides used in STI [1]. This interaction with CMP depends both on characteristics of the wafer such as heights and spatial wavelengths of the nanotopography, and characteristics of the CMP process including the planarization length or pad stiffness.

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Section: Experimental Description and Simulation Resultsmentioning

confidence: 99%

“…Previous work has shown that substantial film thinning can result from the polishing of films on wafers with certain underlying nanotopography signatures [1,3,4] as illustrated in Fig. 2.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Mapping of Nanotopography Interactions with CMP

Lee

Boning

Baylies³

et al. 2002

MRS Proc.

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“…Several specialized systems have been developed for measuring nanotopography, including scanning laser systems as well as interferometric systems that use a white light halogen source [18]. In the nanotopography studies discussed above, 200-and 300-mm wafers have been measured using a commercial laser scanning system (ADE SQM), [19], as well as a commercial white light interferometric system (ADE Phase-Shift Nanomapper), [10], [13]- [15]. A system that uses a Schack-Hartman wavefront sensor has also been reported [20].…”

Section: B Nanotopographymentioning

confidence: 99%

Effect of Nanotopography in Direct Wafer Bonding: Modeling and Measurements

Turner

Spearing

Baylies³

et al. 2005

IEEE Trans. Semicond. Manufact.

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Abstract-Nanotopography, which refers to surface height variations of tens to hundreds of nanometers that extend across millimeter-scale wavelengths, is a wafer geometry feature that may cause failure in direct wafer bonding processes. In this work, the nanotopography that is acceptable in direct bonding is determined using mechanics-based models that compare the elastic strain energy accumulated in the wafer during bonding to the work of adhesion. The modeling results are presented in the form of design maps that show acceptable magnitudes of height variations as a function of spatial wavelength. The influence of nanotopography in the bonding of prime grade silicon wafers is then assessed through a combination of measurements and analysis. Nanotopography measurements on three 150-mm silicon wafers, which were manufactured using different polishing processes, are reported and analyzed. Several different strategies are used to compare the wafers in terms of bondability and to assess the impact of the measured nanotopography in direct bonding. The measurement and analysis techniques reported here provide a general route for assessing the impact of nanotopography in direct bonding and can be employed when evaluating different processes to manufacture wafers for bonded devices or substrates.Index Terms-Direct bonding, microelectromechanical systems (MEMS), nanotopography, silicon-on-insulator (SOI), wafer bonding.

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“…For unpatterned rigid silicon substrates, waviness is defined as nanometer-scale surface height variation on a lateral millimeter-length scale. 7 For polymer substrates, the pressure applied onto the substrate affect the waviness. When nanoimprint lithography is used to pattern flexible substrates, having insight about the effect of the pressure on waviness of the flexible substrate is necessary.…”

Section: Introductionmentioning

confidence: 99%

Stamping-Based Planarization of Flexible Substrate for Low-Pressure UV Nanoimprint Lithography

Altun¹,

Jeong²,

Jung³

et al. 2008

j nanosci nanotechnol

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Patterning flexible substrates in nano scale is an important and challenging issue in the fabrication of next-generation devices based on a non-silicon substrate. Step and Flash imprint lithography (S-FIL) which is a room temperature and low pressure process offers several important advantages, such as the use of a smaller and therefore cheaper stamp or the possibility of the overlay imprinting, as a transparent stamp is utilized. However, it is very difficult to perform S-FIL on a flexible substrate successfully due to the high waviness. The waviness of a flexible substrate is not a constant value in contrast to a rigid substrate. It depends on the imprint pressure applied onto the substrate. In this paper, in section two, the effect of the imprint pressure on the waviness of the surface of the flexible substrate is examined. It is proved that the waviness of the surface of the flexible substrate could not be reduced sufficiently to assure a successful imprint at low imprint pressures. In the third section, a method of patterning polymer substrates using ultra-violet nanoimprint lithography (UV-NIL) is presented. The method consists of two stages, stamping-based planarization and S-FIL. In stamping-based planarization, a planarization layer of transparent polymer is formed onto the flexible substrate. Waviness of the blank stamp (in this study, glass wafer) is transferred to the planarization layer. S-FIL is performed with the nanoimprint tool IMPRIO100 directly onto the planarization layer employing a 1 x 1 in. quartz stamp. Optical microscope and SEM images of the successfully imprinted patterns were also presented.

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Wafer Nanotopography Effects on CMP: Experimental Validation of Modeling Methods

Cited by 9 publications

References 2 publications

Modeling and Mapping of Nanotopography Interactions with CMP

Modeling and Mapping of Nanotopography Interactions with CMP

Effect of Nanotopography in Direct Wafer Bonding: Modeling and Measurements

Stamping-Based Planarization of Flexible Substrate for Low-Pressure UV Nanoimprint Lithography

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