Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics

Pyeon, Jung Joon; Baek, In‐hwan; Lee, Woo Chul; Lee, Hansol; Won, Sung Ok; Lee, Ga Yeon; Chung, Taek; Han, Jeong Hwan; Kim, Jin Sang; Choi, Ji Won; Kang, Chong Yun; Kim, Seong Keun

doi:10.1021/acsami.9b19471

Cited by 21 publications

(24 citation statements)

References 31 publications

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“…2019 [251] SnS [291] www.advmatinterfaces.de MoS 2 : ALD MoS 2 films usually behave as n-type semiconductors, which means that they are turned on (off) by applying a positive (negative) gate voltage (the reverse is true for p-type semiconductors). The best ALD MoS 2 FET performance so far has been reported by Jeon et al [118] for 5 ML MoS 2 films deposited using Mo(CO) 6 and EtSSEt at 250 °C followed by rapid thermal annealing in an Ar atmosphere at 450 °C for 30 s. Bottom gate FETs with an excellent mobility of 13.9 cm 2 V −1 s −1 (10.6 ± 2.6 cm 2 V −1 s −1 over 9 devices) and a large I on /I off ratio of 10 8 were achieved by using an SEt 2 pretreatment dubbed inhibited ALD (iALD) to reduce the nucleation density (Figure 11a).…”

Section: Field-effect Transistorsmentioning

confidence: 99%

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Field-effect Transistorsmentioning

confidence: 99%

“…Pyeon et al. [ 251 ] deposited SnS 2 films using Sn(dmamp) 2 and H 2 S plasma at 150 to 240 °C. Although the film crystallinity improved with increasing deposition temperature, this was accompanied by transformation to rough, “flaky” morphology, which is unsuitable for FETs.…”

Section: Applications Of Atomic Layer Deposited 2d Metal Dichalcogenidesmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…[ 34,35 ] ALD has been used to deposit continuous SnS 2 films with thicknesses from approximately two up to tens of monolayers. [ 36–41 ] In addition to thermal ALD processes, [ 36–39 ] plasma‐enhanced ALD (PEALD) and plasma sulfurization of ALD‐grown SnO films have recently been reported as alternative approaches to deposit high‐quality SnS 2 . [ 40,41 ]…”

Section: Introductionmentioning

confidence: 99%

“…[ 44–46 ] The growth rates may be low, [ 44,47,48 ] rough flake‐like films are often obtained, [ 48–52 ] and the low growth temperature and high nucleation density lead to small grain size which limits the electrical performance of the films. [ 38,41,44 ]…”

Section: Introductionmentioning

confidence: 99%

“…The substrate plays a crucial role in surface‐reaction controlled techniques such as ALD and in 2D film growth in general. In addition to the common SiO 2 /Si, a range of substrates have been tested for the ALD of 2D materials, such as metal oxides, [ 44,47,48 ] gold, [ 49 ] carbon fiber paper, [ 53 ] polyimide, [ 41 ] metal foams, [ 54 ] and sapphire. [ 44,55,56 ] However, there are few studies comparing film growth on different substrates and, thus, limited understanding on how the substrate affects the film growth and properties.…”

Section: Introductionmentioning

confidence: 99%

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Controlling Atomic Layer Deposition of 2D Semiconductor SnS₂ by the Choice of Substrate

Mattinen

King

Brüner³

et al. 2020

Adv Materials Inter

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been explored. The 2D semiconductors, such as MoS 2 , have become the topic of particularly active research due to the crucial role of semiconductors in modern microelectronics. [7-11] Tin disulfide (SnS 2) has recently emerged as a highly interesting 2D semiconductor. [12,13] It crystallizes in the CdI 2-type 2D structure (1T phase) similar to many TMDCs [12,14] and has a fairly large, indirect band gap of approximately 2.2 eV in bulk [13,15] and 2.4−2.6 eV as a monolayer. [15,16] SnS 2 has already shown performance comparable to the benchmark 2D semiconductor, MoS 2 , in applications such as FETs [9,12,17-19] and photodetectors. [12,20] Furthermore, possible reduction in shortchannel leakage [20,21] due to the larger, indirect band-gap of SnS 2 and higher predicted mobility [22] compared to MoS 2 make SnS 2 a favorable material for electronics. Other promising applications for SnS 2 include lithium and sodium-ion batteries, [23,24] gas sensing, [25] and various kinds of catalysis. [26-28] Synthesis of 2D materials including SnS 2 is, however, a major obstacle for the realization of practical applications. An ideal synthesis method should offer high material quality, monolayer-level thickness control as well as good uniformity on large areas and complex shapes-preferably all at low processing temperatures. The substrate is an integral part of the deposition process and applications, and there are great needs both for methods capable of directly synthesizing 2D materials on different substrates, as well as for methods depositing highquality materials on single-crystalline substrates. The latter route could be combined with a transfer of the deposited material onto another substrate, if needed. [29-31] High-quality, few-layer SnS 2 has been produced from bulk crystals by micromechanical exfoliation, [12,17] but this method offers very limited control over the flake size and thickness and has extremely low throughput. Vapor-phase deposition techniques, such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), are promising techniques for the deposition of 2D materials. Thus far, CVD has been mostly used to produce high-quality, isolated few-layer flakes of SnS 2 at 450-700 °C. [16,18,32,33] CVD of continuous SnS 2 films was demonstrated recently, but films below 3-4 nm in thickness remained discontinuous and even 15 nm thick films contained some holes. [34,35] ALD has been used to deposit continuous SnS 2 films with thicknesses from approximately two up to tens of monolayers. [36-41] In addition to thermal ALD processes, [36-39] Semiconducting 2D materials, such as SnS 2 , hold great promise in a variety of applications including electronics, optoelectronics, and catalysis. However, their use is hindered by the scarcity of deposition methods offering necessary levels of thickness control and large-area uniformity. Herein, a low-temperature atomic layer deposition (ALD) process is used to synthesize up to 5 × 5 cm 2 continuous, few-layer SnS 2 films on a variety of substrates, including SiO 2 /Si, S...

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Phase‐Centric MOCVD Enabled Synthetic Approaches for Wafer‐Scale 2D Tin Selenides

Kim,

Lee,

et al. 2024

Advanced Materials

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Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, synthetic or post‐synthetic modifications are required, or even a combination of both, to ensure large‐area, pure‐phase and low‐temperature deposition. We hereby present a set of synthetic strategies to selectively produce wafer‐scale tin selenides, SnSex (both x = 1 and 2), in the two‐dimensional (2D) forms. The 2D‐SnSe2 films with tuneable thicknesses are directly grown via metal‐organic chemical vapor deposition (MOCVD) at 200 °C, and they exhibit outstanding crystallinities and phase homogeneities and consistent film thickness across the entire wafer. This is enabled by excellent control of the volatile metal‐organic precursors and decoupled dual temperature regimes for high‐temperature ligand cracking and low‐temperature growth. In contrast, SnSe, intrinsically inhibited from 2D growth, is indirectly prepared by a thermally driven phase transition of an as‐grown 2D‐SnSe2 film with all the benefits of the MOCVD technique. It is accompanied by the electronic n‐type to p‐type crossover at the wafer scale. Our tailor‐made synthetic routes will accelerate the low‐thermal‐budget production of multiphase 2D materials in a reliable and scalable fashion.This article is protected by copyright. All rights reserved

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Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics

Cited by 21 publications

References 31 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Controlling Atomic Layer Deposition of 2D Semiconductor SnS₂ by the Choice of Substrate

Phase‐Centric MOCVD Enabled Synthetic Approaches for Wafer‐Scale 2D Tin Selenides

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Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics

Cited by 21 publications

References 31 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Controlling Atomic Layer Deposition of 2D Semiconductor SnS2 by the Choice of Substrate

Phase‐Centric MOCVD Enabled Synthetic Approaches for Wafer‐Scale 2D Tin Selenides

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Controlling Atomic Layer Deposition of 2D Semiconductor SnS₂ by the Choice of Substrate