Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

Abstract

Two‐dimentional semiconductors have shown potential applications in multi‐bridge channel field‐effect transistors (MBC‐FETs) and complementary field‐effect transistors (C‐FETs) due to their atomic thickness, stackability, and excellent electrical properties. However, the exploration of MBC‐FET and C‐FET based on large‐scale 2D semiconductors is still lacking. Here, based on a reliable vertical stacking of wafer‐scale 2D semiconductors, large‐scale MBC‐FETs and C‐FETs using n‐type MoS2 and p‐type MoTe2 are successfully fabricated. The drive current of an MBC‐FET with two layers of MoS2 channel (20 µm/10 µm) is up to 60 µA under 1 V bias. Compared with the single‐gate MoS2 FET, the carrier mobility of MBC‐FET is 2.3 times higher and the sub‐threshold swing is 70% smaller. Furthermore, NAND and NOR logic circuits are also constructed based on two vertically stacked MoS2 channels. Then, C‐FET arrays are fabricated by 3D integrating n‐type MoS2 FET and p‐type MoTe2 FET, which exhibit a voltage gain of 7 V/V when VDD = 4 V. In addition, this C‐FET device can directly convert light signals to an electrical digital signal within a single device. The demonstration of MBC‐FET and C‐FET based on large‐scale 2D semiconductors will promote the application of 2D semiconductors in next‐generation circuits.

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS2 and p‐MoTe2

“…However, no power consumption data was provided in that work. [22] Previously, our group successfully synthesized large-scale single crystalline MoS 2 and MoTe 2 via CVD method. [23][24][25][26][27] We also developed a method of transferring CVD-grown MoTe 2 using only deionized water to reduce the chemical residues.…”

Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2

“…Figure 4 shows benchmarking figures of this work with state-of-art NS FETs and CFETs based on different channel materials including 2D [29][30][31] , Si [26,[32][33][34][35][36][37][38][39] and IGZO [38,39] to comprehensively evaluate the performance of the 2D CFET. In the modern integrated circuits, high I ON , low I OFF and resulting high on/off ratio are the critical factors representing high performance and low-power consumption of the transistors.…”

“…The results demonstrate our 2D-CFET's extremely strong current control capability at oneatomic thickness channel, highlighting a potential method of high-performance transistor scaling. In addition, we compared this work with state-of-art 2D-based [29,30] CFETs in terms of SS and EOT at V DS = 0.7 V/−0.7 V. AsFigure 4c (up) depicts, the 2D-CFET achieves 80 and 150 mV dec −1 for nFET and pFET at EOT of 7.5 nm, respectively. Moreover, to further prospect the scaling potential of our 2D-CFET, interface states (D it ) were extracted to measure the quality of channel/dielectrics interface of this device.…”

Nonclassical Growth of Atomically Flat Two‐Dimensional Organic Single Crystals on a Liquid Surface through Fusion

“…[22] Such a step-edge barrier, called Ehrlich-Schwoebel barrier (ESB), [23,24] can reflect admolecules, which will diffuse on the original terrace until they meet other admolecules to nucleate before the completion of the first monolayer. Repeated nucleation and growth of islands of monomolecular thickness results in three-dimensional (3D) island growth and produces organic single crystals with a high density of molecular steps.Herein, we report the controllable growth of atomically flat two-dimensional [25] molecular crystals (2DMCs), and we propose a nonclassical crystallization mechanism. In contrast to the classical crystallization process that involves two stages of nucleation and growth, [26] the nonclassical crystallization process [27][28][29] includes an additional fusion stage (NFG process).…”

“…Herein, we report the controllable growth of atomically flat two-dimensional [25] molecular crystals (2DMCs), and we propose a nonclassical crystallization mechanism. In contrast to the classical crystallization process that involves two stages of nucleation and growth, [26] the nonclassical crystallization process [27][28][29] includes an additional fusion stage (NFG process).…”