The
chemical approaches enabling selective atomic layer deposition
(ALD) are gaining growing interest. The selective ALD has unlocked
attractive avenues for the development of novel nanostructures and
found its versatile applications in emerging fields beyond the semiconductor
industry. In this article, the recent developments of inherently selective
ALD methods are summarized. Based on precursors’ preferential
adsorptions on dangling bonds, interstitials, grain boundaries, etc.,
single atom deposition, well aligned nanowire growth, and defect passivation
can be achieved to minimize the total surface energy. By choosing
the precursors with appropriate ligands, activities, steric hindrances,
etc., terrace and step edge preferential selectivity can be obtained
on the same material. The starting surfaces have remarkable influences
on the initial nucleation stage, which are more pronounced between
different materials compared to the heterogeneity regions of the same
material. Thus, the inherent selectivity can be achieved or enhanced
by tuning kinetic parameters including precursor partial pressure,
temperature, etc. The intrinsic driving forces, challenges, and perspectives
of the inherently selective ALD with accuracy and robustness for nanofabrication
are discussed. It is a great expansion of the selective ALD technique
for bottom up nanofabrication in various emerging application fields.