Wafer-Scale Highly Oriented Monolayer MoS<sub>2</sub> with Large Domain Sizes

Wang, Qinqin; Li, Na; Tang, Jian; Zhu, Jiaojun; Zhang, Qinghua; Jia, Qi; Lü, Ying; Zheng, Wei; Yu, Hua; Zhao, Yanchong; Guo, Yutuo; Gu, Lin; Sun, Gang; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

doi:10.1021/acs.nanolett.0c02531

Cited by 200 publications

(179 citation statements)

References 30 publications

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“…[37][38][39] For the CVD process, the growth substrate plays an important role in the resulting TMDCs, for example, centimeter-scale MoS 2 monolayer on has been achieved on Au(111), [40] the c-plane sapphire has been used for epitaxial growth of monolayer MoS 2 . [41,42] Recently, large-area MoS 2 and MoSe 2 have been synthesized on glass substrate with the additional Mo foil facing down the substrate as the precursor. [43][44][45] The isotropic and homogeneous molten glass surface at 1050 °C can effectively promote the resulting size of TMDCs due to the suppression of the nucleation density.…”

Section: Introductionmentioning

confidence: 99%

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors

et al. 2021

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TMDCs, [7][8][9] the quantum spin Hall effect, [10] the valleytronics, [11,12] as well as the 2D superconductivity, [13] implying extensive potential applications. In contrast to graphene, monolayer TMDCs with suitable bandgaps have demonstrated the state-of-the-art characteristics for integrated circuits (IC), i.e., high on/ off ratio (>10 7 ) and record drive current density (100 µA µm −1 ). [14,15] So far, a number of approaches have been developed to obtain TMDCs, including the micromechanical cleavage method [16] and liquid-phase exfoliation [17][18][19] due to the weak van der Waals interactions between the neighboring layers. Among them, chemical vapor deposition (CVD) has been widely demonstrated to be an effective technique to synthesize highquality TMDCs as well as their in-plane and vertical heterostructures by using different precursors, [20,21] such as the solid powders of MoO 3 , [22][23][24][25] MoO 3 solution, [26,27] MoCl 5 , [28] WO 3 , [29,30] WS 2 , WSe 2 , MoS 2 , and MoSe 2 [31][32][33] with the additional alkali metal halides as the growth promoters, [2,34] the gaseous chemical precursors including molybdenum hexacarbonyl (MHC), [4] as well as the liquid precursors like the solution of ammonium thiomolybdate (NH 4 ) 2 MoS 4 , [35,36] ammonium molybdate tetrahydrate (NH 4 ) 6 Mo 7 O 24 •4H 2 O and ammonium tungstate hydrate Chemical vapor deposition (CVD) has been widely used to synthesize highquality 2D transition-metal dichalcogenides (TMDCs) from different precursors. At present, quantitative control of the precursor with high precision and good repeatability is still challenging. Moreover, the process to synthesize TMDCs with designed patterns is complicated. Here, by using an industrial inkjet-printer, an in situ aqueous precursor with robust usage control at the picogram (10 −12 g) level is achieved, and by precisely tuning the inkjetprinting parameters, followed by a rapid heating process, large-area patterned TMDC films with centimeter size and good thickness controllability, as well as heterostructures of the TMDCs, are achieved facilely, and high-quality single-domain monolayer TMDCs with millimeter-size can be easily synthesized within 30 s (corresponding to a growth rate up to 36.4 µm s −1 ). The resulting monolayer MoS 2 and MoSe 2 exhibits excellent electronic properties with carrier mobility up to 21 and 54 cm 2 V −1 s −1 , respectively. The study paves a simple and robust way for the in situ ultrafast and patterned growth of high-quality TMDCs and heterostructures with promising industrialization prospects. Moreover, this ultrafast and green method can be easily used for synthesis of other 2D materials with slight modification.

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Section: Introductionmentioning

confidence: 99%

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors

et al. 2021

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“…CVD-grown MoS2 has been synthesized via the sulfurization of Mo containing precursors, such as Mo [16], MoO2 [17][18][19][20] and MoO3 , among which the use of MoO3 powder as the precursor has remained the most popular method owing to the possibility of obtaining large area single crystal and also continuous films [41][42][43][44][45][46][47][48][49].In fact, in very recent work, Q. Wang et al [46] have employed a customized multisource CVD system to successfully demonstrate the wafer-scale growth of MoS2 using MoO3 as the precursor material. While these accomplishments are noteworthy, the poisonous nature (strong irritant and carcinogen according to GHS classification) and low evaporation temperature (350 °C) of MoO3 powder means that harmful exposure to this material is more likely, posing a serious health hazard situation.…”

Section: Introductionmentioning

confidence: 99%

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

et al. 2021

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The low evaporation temperature and carcinogen classification of commonly used molybdenum trioxide (MoO3) precursor render it unsuitable for the safe and practical synthesis of molybdenum disulfide (MoS2). Furthermore, as evidenced by several experimental findings, the associated reaction constitutes a multistep process prone to the formation of uncontrolled amounts of intermediate MoS2−yOy phase mixed with the MoS2 crystals. Here, molybdenum dioxide (MoO2), a chemically more stable and safer oxide than MoO3, was utilized to successfully grow cm-scale continuous films of monolayer MoS2. A high-resolution optical image stitching approach and Raman line mapping were used to confirm the composition and homogeneity of the material grown across the substrate. A detailed examination of the surface morphology of the continuous film revealed that, as the gas flow rate increased by an order of magnitude, the grain-boundary separation dramatically reduced, implying a transition from a kinetically to thermodynamically controlled growth. Importantly, the single-step vapor-phase sulfurization (VPS) reaction of MoO2 was shown to suppress intermediate state formations for a wide range of experimental parameters investigated and is completely absent, provided that the global S:Mo loading ratio is set higher than the stoichiometric ratio of 3:1 required by the VPS reaction.

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“…These results suggest that it is difficult to restrain the growth behavior of ReS 2 by simply tuning the lattice symmetry of substrate, as exemplified by the orientation‐controlled growth of high‐symmetry 2D materials. [ 9–12,35–38 ] This is reasonable because the low‐symmetry structure of ReS 2 endows it more degree of freedom (like Re4‐chain reconstruction) during epitaxial growth process. In this respect, the growth substrate must afford a strong constraint to avoid multi‐orientation epitaxy of ReS 2 .…”

Section: Resultsmentioning

confidence: 99%

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS₂ on Selected Au(101) Substrate toward Large‐Scale Single Crystal Fabrication

Dai

Tang

et al. 2021

Adv Funct Materials

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Low‐symmetry 2D materials with strong in‐plane anisotropy are ideal platforms for building multifunctional optoelectronic devices. However, the random orientations and easy formation of multidomain structures lead to the single‐crystal synthesis of these materials remains a big challenge. Herein, for the first time, the orientation‐controlled synthesis of ReS2, a typical low‐symmetry 2D material, is explored via interface engineering based on the strong interaction between the material and Au substrates with different symmetries. It is revealed that the lattice orientation and growth behavior of ReS2 are closely relevant to the lattice symmetry of Au facets. Single crystal ReS2 domains with two and even one orientations are acquired on the four‐fold symmetry Au(001) facet and the two‐fold symmetry Au(101) facet, respectively. Combined with density functional theory calculations, it is demonstrated that the synergy of ultra‐strong ReS2‐Au interfacial coupling and reduction of symmetry of Au facet is critical to realizing its intrinsic anisotropic growth. Furthermore, great enhancement of electrical and photoelectrical performances are acquired on the well‐aligned single crystal ReS2 device. The progress achieved in this work provides significant guidance for the controllable synthesis of wafer‐scale single crystals of low‐symmetry 2D materials for their practical device applications.

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Wafer-Scale Highly Oriented Monolayer MoS₂ with Large Domain Sizes

Cited by 200 publications

References 30 publications

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS₂ on Selected Au(101) Substrate toward Large‐Scale Single Crystal Fabrication

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Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

Cited by 200 publications

References 30 publications

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors

In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS2 on Selected Au(101) Substrate toward Large‐Scale Single Crystal Fabrication

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Wafer-Scale Highly Oriented Monolayer MoS₂ with Large Domain Sizes

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS₂ on Selected Au(101) Substrate toward Large‐Scale Single Crystal Fabrication