Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers

Justice, John; Bower, Chris; Meitl, Matthew A.; Mooney, M.; Gubbins, M.; Corbett, Brian

doi:10.1038/nphoton.2012.204

Cited by 235 publications

(149 citation statements)

References 20 publications

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“…The thus emerging technology is rapidly expanding the landscape of photonics applications towards tele-and data communication as well as sensing from the infrared to the mid infrared wavelength range [15][16][17] . Today's light sources of such systems are lasers made from direct bandgap group III-V materials operated off-or on-chip which requires fibre coupling or heterogeneous integration, for example by wafer bonding 3 , contact printing 4,5 or direct growth 6,7 , respectively. Hence, a laser source made of a direct bandgap group IV material would further boost lab-on-a-chip and trace gas sensing 15 as well as optical interconnects 18 by enabling monolithic integration.…”

Section: Direct Bandgap Group IV Materials May Thus Represent a Pathwmentioning

confidence: 99%

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Lasing in direct-bandgap GeSn alloy grown on Si

et al. 2015

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Direct bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and CMOS technology.Although a group IV direct bandgap material has not been demonstrated yet, silicon photonics using CMOS-compatible processes has made great progress through the development of Si-based waveguides 12 , photodetectors 13 and modulators 14 . The thus emerging technology is rapidly expanding the landscape of photonics applications towards tele-and data communication as well as sensing from the infrared to the mid infrared wavelength range 15-17 . Today's light sources of such systems are lasers made from direct bandgap group III-V materials operated off-or on-chip which requires fibre coupling or heterogeneous integration, for example by wafer bonding 3 , contact printing 4,5 or direct growth 6,7 , respectively. Hence, a laser source made of a direct bandgap group IV material would further boost lab-on-a-chip and trace gas sensing 15 as well as optical interconnects 18 by enabling monolithic integration. In this context, Ge plays a prominent role since the conduction band minimum at the -point of the Brillouin-zone (referred to as -valley) is 3 located only approx. 140 meV above the fourfold degenerate indirect L-valley. To compensate for this energy difference and thus form a laser gain medium, heavy n-type doping of slightly tensile strained Ge has been proposed 19 . Later, laser action has been reported for optically 20 and electrically pumped Ge 21 doped to approx. 1 and 4×10 19 cm -3 , respectively. However, pump-probe measurements of similarly doped and strained material did not show evidence for net gain 22 , and in spite of numerous attempts, researchers failed to substantiate above results up to today. Other investigated concepts concern the engineering of the Ge band structure towards a direct bandgap semiconductor using micromechanicallystressed Ge nanomembranes 9 or silicon nitride (Si 3 N 4 ) stressor layers 23 . Very recently, Süess et al. 10 presented a stressor-free technique which enables the introduction of more than 5.7 % 24 uniaxial tensile strain in Ge µ-bridges via selective wet under-etching of a pre-stressedlayer. An alternative technique in order to achieve direct bandgap material is to incorporate Sn atoms into a Ge lattice, which primarily reduces the gap at the -point. At a sufficiently high fraction of Sn, the energy of the -valley decreases below that of the L-valley. This indirect-to-direct transition for relaxed GeSn binaries has been predicted to occur at about 20 % Sn by Jenkins et al. 25 , but more recent calculations indicate much lower required Sn concentrations in the range of 6.5-11.0 % 26,27 . A major challenge for the realization of such GeSn alloys is the low (< 1 %) equilibrium solubility of Sn in Ge 28 and the large lattice mismatch of about 15 % between Ge and -Sn. For GeSn grown on Ge substrates, this mismatch induces biaxial compressive strain causing a shift of the  and L-valley crossover towards higher Sn concentrations ...

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Section: Direct Bandgap Group IV Materials May Thus Represent a Pathwmentioning

confidence: 99%

“…In order to overcome this drawback, several routes have been followed, such as the all-optical Si Raman laser 2 or the heterogeneous integration of direct bandgap III-V lasers on Si [3][4][5][6][7] . Here, we report on lasing in a direct bandgap group IV system created by alloying Ge with Sn 8 without mechanically introducing strain 9,10 .…”

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Lasing in direct-bandgap GeSn alloy grown on Si

et al. 2015

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“…In recent years, the impressive progress of NM transfer and stacked NMs in photonic applications has been implemented; one main research focus is integrating III-V material or efficient light-absorbing material onto silicon substrate for silicon photonics applications, including a vertical cavity laser with two Si photonic crystal (PC) mirrors [12], first-order diffraction-based surface emitting lasers with a Si PC pattern [30], an edge-emitting laser on Si substrate [38], multi-color photodetectors [39] and a cavity-enhanced Ge photodetector on a silicon on insulator (SOI) substrate [40]. The other is to take advantage of the flexible mechanical property to realize bendable phototransistors and photodetectors [25,[41][42][43] and light-emitting diodes (LEDs) [44] by transfer printing a very thin membrane layer onto a plastic substrate.…”

Section: Semiconductor Nm-based Light-emitting Devicesmentioning

confidence: 99%

“…Transfer printing is also applicable for III-V edge-emitting lasers based on silicon substrate [38]. John et al demonstrated a wafer-scale integration of AlGaAs lasers on silicon using transfer printing of epitaxial layers, as shown in Figure 6.…”

Section: Edge-emitting Lasersmentioning

confidence: 99%

Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices

Liu

Zhou

2016

Photonics

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Abstract:Heterogeneous integration between silicon (Si), III-V group material and Germanium (Ge) is highly desirable to achieve monolithic photonic circuits. Transfer-printing and stacking between different semiconductor nanomembranes (NMs) enables more versatile combinations to realize high-performance light-emitting and photodetecting devices. In this paper, lasers, including vertical and edge-emitting structures, flexible light-emitting diode, photodetectors at visible and infrared wavelengths, as well as flexible photodetectors, are reviewed to demonstrate that the transfer-printed semiconductor nanomembrane stacked layers have a large variety of applications in integrated optoelectronic systems.

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“…Much work has thus been devoted in the last decade to integrating III-V laser diodes on Si platforms for telecom applications. Impressive results have been achieved in the visible to near infrared wavelength range by both heterogeneous integration, where III-V materials are bonded to silicon [11][12][13][14] , and direct epitaxial growth of III-V laser diodes on Si substrates [15][16][17][18][19][20] . In parallel, extending silicon photonics toward the mid-infrared (MIR) wavelength spectral region (2-20 µm) has emerged as a new frontier 21 .…”

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confidence: 99%

Quantum cascade lasers grown on silicon

Баранов

Nguyen-Van

Loghmari

et al. 2018

2018 International Conference Laser Optics (ICLO)

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Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/ AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.The 20th Century has seen unparalleled success of the silicon-based microelectronics industry, whereas the 21st Century is witnessing the explosion of photonics. Silicon photonics lies at the convergence of both fields and promises to be the next disruptive technology for integrated circuits 1 . This however requires that the whole set of optoelectronics functions be integrated onto a Si platform. While various Si-based modulators and photodetectors have already been demonstrated 2-5 , integrated light sources have for long remained a challenge 6 . Silicon-based sources would straight away bridge the gap but the indirect bandgap of Si or Ge is a severe limitation and, in spite of unquestionable advances [7][8][9][10] , such devices will not outperform in the foreseeable future their III-V semiconductor counterparts which remain the most efficient semiconductor laser technology. Much work has thus been devoted in the last decade to integrating III-V laser diodes on Si platforms for telecom applications. Impressive results have been achieved in the visible to near infrared wavelength range by both heterogeneous integration, where III-V materials are bonded to silicon [11][12][13][14] , and direct epitaxial growth of III-V laser diodes on Si substrates [15][16][17][18][19][20] . In parallel, extending silicon photonics toward the mid-infrared (MIR) wavelength spectral region (2-20 µm) has emerged as a new frontier 21 . Indeed, most molecules exhibit absorption fingerprints in the MIR range 22 , which is of crucial interest for societal applications such as health diagnostics, detection of biological and organic compounds, monitoring of toxic gases or of greenhouse gas emission, to name but a few. MIR Si photonics could thus lead to integrated, compact, cost-effective, smart spectroscopy instruments 21,23 . Several groups have already demonstrated...

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Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers

Cited by 235 publications

References 20 publications

Lasing in direct-bandgap GeSn alloy grown on Si

Lasing in direct-bandgap GeSn alloy grown on Si

Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices

Quantum cascade lasers grown on silicon

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