Wafer‐scale monolithic hybrid integration of Si‐based IC and III–V epi‐layers—A mass manufacturable approach for active matrix micro‐LED micro‐displays

Abstract

Hybridization of silicon integrated circuits (ICs) with compound semiconductor device arrays are crucial for making functional hybrid chips, which are found to have enormous applications in many areas. Although widely used in manufacturing hybrid chips, the flip-chip technology suffers from several limitations that are difficult to overcome, especially when the demand is raised to make functional hybrid chips with higher device array density without sacrificing the chip footprint. To address those issues, Beida Jade Bird Display Limited has developed its unique wafer-level monolithic hybrid integration technology and demonstrated its advantages in making large-scale hybrid integration of functional device arrays on Si IC wafers. Active matrix micro-light-emitting diode micro-displays with a resolution of 5000+ pixel per inch were successfully fabricated using Beida Jade Bird Display Limited's monolithic hybrid integration technology. The general fabrication method is described, and the result is presented in this paper. The fabricated monochromatic micro-light-emitting diode micro-displays exhibit improved device performance than do other micro-display technologies and have great potentials in applications such as portable projectors and near-to-eye projection for augmented reality. More importantly, the wafer-scale monolithic hybrid integration technology offers a clear path for low-cost mass production of hybrid optoelectronic IC chips.

32‐1: Invited Paper: Review of Micro‐light‐emitting‐diode Technology for Micro‐display Applications

“…For example, when 280 °C was tried for a 0.4" FHD display using a gold-tin (Au 0.8 Sn 0.2 ) eutectic bonding, the TEC difference leads to at least 2.1 μm of misalignment at the edge of the active display area [26]. Therefore, for a micro-display with μLEDs a bonding technology with a low temperature and a reliable bonding material must be developed [27,28]. Once the issues known or even unknown are resolved, this hybridization technology can be a standard due to its advantage of realizing high resolution.…”

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

“…Micro-LED devices have received great attention recently, owing to their superior properties such as self-emission, high brightness, low power consumption, fast response time and long lifetime [1][2][3][4][5]. With the developments of semiconductor technology and the maturity of miniaturization technology, more and more new applications of III-nitride light-emitting diodes (LEDs) have been realized, such as lighting sources [6], visible light communication (VLC) [7], high-power devices [8] and biomedical devices [9].…”

23‐5: Late‐News Paper: High‐Resolution Monolithic Micro‐LED Full‐color Micro‐display

“…1 Depending on the starting epi-wafer, monolithic GaN micro-LED typically features monochromatic emission in blue, violet or green. There have been efforts to develop high-resolution highperformance monochromatic micro-LED micro-displays in both academia 2,3 and industry 4,5 since nearly a decade ago. Nevertheless, full-color emission from the same GaN epilayers is intrinsically challenging due to the extremely underdeveloped efficiency of red GaN LED.…”