Wafer-scale MoS<sub>2</sub> with water-vapor assisted showerhead MOCVD

Macha, Michał; Ji, Hyun Goo; Tripathi, Mukeshchand; Zhao, Yijiao; Thakur, Mukeshchand; Zhan, Jing; Kis, András; Radenović, Aleksandra

doi:10.1039/d2na00409g

Cited by 13 publications

(3 citation statements)

References 59 publications

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“…The route towards market-ready fabrication of 2D-materials-based devices for the post-Moore era must foresee the growth of single crystal 2D materials over wafer-size substrates in a reliable and reproducible fashion [251]. Despite the progresses made in that direction by MBE, especially useful for magnetic and air sensitive TMDs [252], and by the growth of 2D metal-organic frameworks [253], CVD and MOCVD still maintain a dominant role for the synthesis of high-quality large-area 2D crystals as they provide simplicity, cost-effectiveness, and scalability [254,255].…”

Section: Discussionmentioning

confidence: 99%

Growth and applications of two-dimensional single crystals

et al. 2023

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Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisite to realize 2D-based high-performance applications. In this review, we aim to provide an in-depth analysis of the state-of-the-art technology for the growth and applications of 2D materials, with particular emphasis on single crystals. We first summarize the major growth strategies for monolayer 2D single crystals. Following that, we discuss the growth of multilayer single crystals, including the control of thickness, stacking sequence, and heterostructure composition. Then we highlight the exploration of 2D single crystals in electronic and optoelectronic devices. Finally, a perspective is given to outline the research opportunities and the remaining challenges in this field.

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Section: Discussionmentioning

confidence: 99%

Growth and applications of two-dimensional single crystals

et al. 2023

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“…The shaded region indicates the back end of line (BEOL) with stipulated limits (450–500 °C for 0–2 h). The plots were constructed using data from refs , , and − .…”

Section: Conventional Methods: Optimizing An Implicit Synthesis Trade...mentioning

confidence: 99%

A Researcher’s Perspective on Unconventional Lab-to-Fab for 2D Semiconductor Devices

et al. 2023

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Current silicon technology is on the verge of reaching its performance limits. This aspect, coupled with the global chip shortage, makes a solid case for steering our attention toward the accelerated commercialization of other electronic materials. Among the available suite of emerging electronic materials, two-dimensional materials, including transition metal dichalcogenides (TMDs), exhibit improved short-channel effects, high electron mobility, and integration into CMOS-compatible processing. While these materials may not be able to replace silicon at the current stages of development, they can supplement Si in the form of Sicompatible CMOS processing and be manufactured for tailored applications. However, the major hurdle in the path of commercialization of such materials is the difficulty in producing their wafer-scale forms, which are not necessarily single crystalline but on a large scale. Recent but exploratory interest in 2D materials from industries, such as TSMC, necessitates an in-depth analysis of their commercialization potential based on trends and progress in entrenched electronic materials (Si) and ones with a short-term commercialization potential (GaN, GaAs). We also explore the possibility of unconventional fabrication techniques, such as printing, for 2D materials becoming more mainstream and being adopted by industries in the future. In this Perspective, we discuss aspects to optimize cost, time, thermal budget, and a general pathway for 2D materials to achieve similar milestones, with an emphasis on TMDs. Beyond synthesis, we propose a lab-to-fab workflow based on recent advances that can operate on a low budget with a mainstream full-scale Si fabrication unit.

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“…Among the various synthesis methods such as liquid-phase or Scotch-tape exfoliation, hydrothermal synthesis, and chemical vapor deposition (CVD), CVD stands out as the most promising approach for the large-scale production of MoS 2 . One such method involves vaporizing and reacting molybdenum trioxide (MoO 3 ) and sulfur (S) powder precursors within a reactor at elevated temperatures (500–900 °C). − To achieve better control, it is desirable to introduce gaseous precursors that originate ex situ into the CVD reactor. − To this end, gaseous molybdenum hexacarbonyl (Mo(CO) 6 ) and hydrogen sulfide (H 2 S) precursors can be used for organometallic CVD, resulting in the uniform deposition of MoS 2 with varying layer numbers ( n = 1, 2, 3, ...) over large areas on diverse substrates. ,,− However, a precise understanding of the growth mechanisms that determine the size and shape of MoS 2 flakes during metal–organic CVD (MOCVD) has remained elusive.…”

Section: Introductionmentioning

confidence: 99%

From Molecular Precursors to MoS₂ Monolayers: Nanoscale Mechanism of Organometallic Chemical Vapor Deposition

Ghorai,

Govind Rajan

2024

Chem. Mater.

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The development of a fully ab initio theory for the chemical vapor deposition (CVD) synthesis of two-dimensional (2D) materials is a prominent challenge in computational chemistry and materials science. Here, quantum-mechanical density functional theory calculations are used to discover the mechanisms underlying the nucleation and growth of monolayer 2H molybdenum disulfide (MoS 2 ) during organometallic CVD. Starting with molybdenum hexacarbonyl (Mo(CO) 6 ) and hydrogen sulfide (H 2 S) as molecular precursors, we elucidate processes such as the decomposition of Mo(CO) 6 to Mo(CO) 3 , sulfidation of Mo(CO) 3 , formation of metallic trigonal-phase (1T) Mo−S clusters, transition to semiconducting hexagonal-phase 2H MoS 2 , and the competition between the growth of Mo-and S-zigzag edges that lead to triangular and hexagonal flakes. We demonstrate thermodynamic and kinetic control over the formation of Moand S-zigzag edges. Additionally, we find the removal of hydrogen (H 2 ) to be the rate-determining step in the growth process. We further compute the free energy of formation of the investigated Mo−S clusters on amorphous SiO 2 , demonstrating the important role played by the SiO 2 substrate in the initial stages of nucleation and growth. We also show the feasibility of forming Mo−S clusters with more than two Mo atoms on the SiO 2 surface. Our work lays the foundation for developing fully ab initio models of 2D material synthesis.

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Wafer-scale MoS₂ with water-vapor assisted showerhead MOCVD

Abstract: Among numerous thin films synthesis methods the metallorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for a broad use in a scalable and commercially...

Cited by 13 publications

References 59 publications

Growth and applications of two-dimensional single crystals

Growth and applications of two-dimensional single crystals

A Researcher’s Perspective on Unconventional Lab-to-Fab for 2D Semiconductor Devices

From Molecular Precursors to MoS₂ Monolayers: Nanoscale Mechanism of Organometallic Chemical Vapor Deposition

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Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Abstract: Among numerous thin films synthesis methods the metallorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for a broad use in a scalable and commercially...

Cited by 13 publications

References 59 publications

Growth and applications of two-dimensional single crystals

Growth and applications of two-dimensional single crystals

A Researcher’s Perspective on Unconventional Lab-to-Fab for 2D Semiconductor Devices

From Molecular Precursors to MoS2 Monolayers: Nanoscale Mechanism of Organometallic Chemical Vapor Deposition

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Product

Resources

About

Wafer-scale MoS₂ with water-vapor assisted showerhead MOCVD

From Molecular Precursors to MoS₂ Monolayers: Nanoscale Mechanism of Organometallic Chemical Vapor Deposition