Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

Abstract

Atomically thin molybdenum disulfide (MoS(2)) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS(2) atomic thin layers is still lacking. Here we report that wafer-scale MoS(2) thin layers can be obtained using MoO(3) thin films as a starting material followed by a two-step thermal process, reduction of MoO(3) at 500 °C in hydrogen and sulfurization at 1000 °C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS(2) films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

“…Table S1 (Supporting Information) compares the elec tron mobility and On/Off current ratio between our ALD based MoS 2 device and previously reported MoS 2 FETs. The mobility of our 4L MoS 2 are comparable or even higher than those of previously reported CVD samples on SiO 2 /Si with a SiO 2 gate oxide or on sapphire substrate, [14,22,23,33,36,37] and is highest among all the published ALD based MoS 2 device research. [5,6] …”

“…All the fabricated monolayer MoS 2 FETs exhibited well defined n type transport behavior, similar to previously published work. [5,23,33] Figure 3b shows the transfer characteristics and the output characteristics were demon strated in Figure 3d. The field effect electron mobility was extracted from the liner regime of the transfer curve using the equation…”

“…Based on the transfer free and top down fabrication process, the electrical performance of the MoS 2 top gated transistors are comparable to the previously reported monolayer and few layer CVD MoS 2 FET devices. [22,23] …”

Spectroscopic Signatures for Interlayer Coupling in MoS2–WSe2 van der Waals Stacking

“…[1][2][3][4][5][6][7][8][9][10][11][12] For example, molybdenum disulphide (MoS2) exhibits an indirect bandgap of 1.2 eV in bulk, but it becomes a direct gap semiconductor (bandgap = 1.8 eV)…”

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS2 Crystals on Silicon Dioxide Substrates

“…Among these methods, chemical vapor deposition (CVD) is most promising in terms of scalability, simple operation and low cost, and has been used to grow various 2D materials directly on dielectric substrates 17, 18, 19, 20, 21, 22, 23, 24, 25, 26. However, similar to other TMDs,19, 20, 21 CVD‐grown continuous MoS 2 film suffer from a high density of rotational domain boundaries 27, 28.…”