Wafer-scale nanostructure formation inside vertical nano-pores

Abstract

We propose a wafer-scale technique for nanostructure formation inside vertically oriented, throughmembrane nano-pores. It uses 50 nm monocrystalline silicon pillars as a mold, embedded in a silicon nitride membrane formed in an innovative step. The proposed technique paves the way towards advanced functionalization of parallel oriented nano-pores for actuation, sensing, filtering/trapping purposes.

Wafer-Scale Self-Aligned Fabrication of Nanometric Curved Tunneling Junctions

“…A schematic illustration of the cMIS tunneling junction is shown in Figure 1. The junctions are created inside an array of silicon nanopillars embedded in a silicon-rich silicon nitride (SiRN) membrane [6]. Utilizing displacement Talbot lithography (DTL), the pillar diameter and pitch are about 80 nm and 250 nm, respectively.…”

“…In fabrication step (6), low-stress SiRN (~400 nm) was conformally deposited using LPCVD to fill the empty space between the pillars. Subsequently, poly-silicon (~50 nm) was deposited at 590 °C and wet oxidized (~10 nm) at 800 °C.…”

Wafer-scale fabrication and modification of silicon nano-pillar arrays for nanoelectronics, nanofluidics and beyond

“…Besides being used as the functional device area, the SiNW structure can also be used as a template for other applications. An example is by embedding the SiNWs in a dielectric ceramic material, typically low-stress silicon-rich silicon nitride (SiRN), that can be deposited through low-pressure chemical vapour deposition (LPCVD) [5]. Furthermore, since the SiNWs are fabricated from a single crystal, they can be machined by a combination of anisotropic etching and self-aligned nano-patterning techniques such as corner lithography [6,7].…”

Sidewall patterning—a new wafer-scale method for accurate patterning of vertical silicon structures

“…Some specific 3D structures can sometimes be obtained by applying conventional wafer-scale nanofabrication techniques in unconventional combinations [7,[30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48]. Many of these use the edge or corner of some feature as a starting point for defining new features ('Edge Lithography' [33] or 'Corner Lithography' [36]) and/or the specific orientation of certain surfaces which results in a contrast in deposition or etching speed.…”