Wafer2Wafer Etch Monitor via <i>In Situ</i> QCLAS

Lang, N.; Röpcke, J.; Steinbach, Annina M.; Wege, S.

doi:10.1109/tps.2009.2033475

Cited by 15 publications

(26 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore it strongly depends on properties like reactor geometry, flowing conditions, pump speed and the MFC itself. Compared to typical process times for etching deep trench structures in silicon for DRAM production of more than 10min [14], the MFC control via QCLAS in the present configuration would be adaptable.…”

Section: Resultsmentioning

confidence: 99%

“…First applications of an especially designed Q-MACS for in situ process monitoring of the industrial production of DRAMs have been published recently [14]. It was shown, that important etch products, like the SiF 4 molecule, can be monitored in situ during etch processes for deep trench structures in silicon in real-time and under conditions of high volume production.…”

Section: Qclas For Mfc Controlmentioning

confidence: 99%

See 1 more Smart Citation

Quantum cascade laser absorption spectroscopy – A new method to study molecular plasma components

Röpcke

Glitsch

Davies

et al. 2010

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Quantum cascade laser absorption spectroscopy -A new method to study molecular plasma components Abstract The recent development of quantum cascade lasers (QCLs) offers an attractive new option for the monitoring and control of industrial plasma processes and for trace-gas analysis as well as for highly time-resolved studies on the kinetics of plasma processes. The contribution reviews selected examples of the application of QCLs for infrared absorption studies in basic research and for plasma monitoring and control in industry.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Qclas For Mfc Controlmentioning

confidence: 99%

Quantum cascade laser absorption spectroscopy – A new method to study molecular plasma components

Röpcke

Glitsch

Davies

et al. 2010

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

show abstract

“…SiF 4 was detected as a key product in such a process using NF 3 , HBr and O 2 as precursor [7,8]. Increasing aspect ratios are ongoing targets in semiconductor industries and require sensitive and reliable monitoring tools and control systems for high volume production processes.…”

Section: Monitoring Of Merie Processes Containing Fluoronitrogenmentioning

confidence: 99%

“…Compared to lead salt diode lasers, distributed feedback (DFB) QCLs provide (i) continuous mode-hop free wavelength tuning, (ii) increasingly high output powers up to hundreds of mW, (iii) near room temperature operation, and in case of cw-DFB-QCLs (iv) narrow line width radiation. Since QCLs offer the possibilities to design very compact and robust spectroscopic instruments, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements [7][8][9][10][11][12][13]. Quantum cascade laser absorption spectroscopy (QCLAS) provides a means for determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetics.…”

Section: Introductionmentioning

confidence: 99%

In Situ Monitoring Capabiities of Quantum Cascade Laser Absorption Spectroscopy in Industrial Plasma Processes

Lang

Macherius

Glitsch

et al. 2015

Contrib. Plasma Phys.

View full text Add to dashboard Cite

Plasmas in interaction with surfaces are of key importance in a wide range of applications, which include materials technology, microelectronics, environmental issues, and biomedicine. The intense use of plasma technological processes demands proper plasma diagnostic techniques for monitoring, controlling and optimization purposes in industrial environments. In particular, for the improvement of the efficiency of a production process, in situ diagnostic techniques with online capabilities are favorable. From the middle of the last decade a variety of phenomena in molecular non-equilibrium plasmas in which many short-lived and stable species are produced have been successfully studied with quantum cascade laser absorption spectroscopy (QCLAS) in the mid-infrared spectral range. It has been possible to determine absolute concentrations of species, temperatures, degrees of dissociation, dynamics of reaction processes and phenomena involving plasma-surface interactions using spectroscopy, thereby providing a link with chemical and kinetic modelling of the plasma. Since quantum cascade lasers (QCLs) emit near room temperature, i.e., without the need of cryogenic cooling, very compact and robust spectroscopic instruments can be designed. This has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. Recent applications of infrared absorption spectroscopy using QCLs for in situ monitoring of plasma processes in industrial environments are reviewed. Examples which emphasize the capabilities of QCLAS as plasma diagnostic technique in industrial plasma processes will be given.

show abstract

“…Examples of applications of QCL based spectrometers as a plasma diagnostic method in the semiconductor industry have been previously published. [20][21][22][23] In this letter, we demonstrate the in situ monitoring of CF 2 radicals using a cw distributed-feedback-QCL (DFB-QCL) operating around 1106.2 cm À1 . It is shown that the monitoring of the CF 2 concentration can serve as a diagnostic tool of dielectric etching plasma processes.…”

mentioning

confidence: 99%

Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

Hübner

Lang

Zimmermann

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm(-1). We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the nu(3) fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing

show abstract

Wafer2Wafer Etch Monitor via In Situ QCLAS

Cited by 15 publications

References 8 publications

Quantum cascade laser absorption spectroscopy – A new method to study molecular plasma components

Quantum cascade laser absorption spectroscopy – A new method to study molecular plasma components

In Situ Monitoring Capabiities of Quantum Cascade Laser Absorption Spectroscopy in Industrial Plasma Processes

Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

Contact Info

Product

Resources

About