Wannier–Stark localization in a strained InGaAs/GaAs superlattice

Pezeshki, B.; Thomas, Dominique; Harris, James S.

doi:10.1063/1.103915

Cited by 11 publications

(2 citation statements)

References 9 publications

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“…In general, as the base layer is made with InGaAs bulk material, the thickness of the InGaAs layer is severely limited due to the high strain resulting from the lattice mismatch [8]. Previously, the electronic and photonic properties of InGaAs/GaAs long-period superlattices have been demonstrated because the strain of the superlattices could be released [11][12][13]. Thus, the thickness of the studied device with the superlattice-base is applicable.…”

Section: Device Structuresmentioning

confidence: 97%

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Tsai

Hsu

et al. 2008

Solid-State Electronics

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Section: Device Structuresmentioning

confidence: 97%

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Tsai

Hsu

et al. 2008

Solid-State Electronics

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“…10 For WSLtype SLs on GaAs substrates, however, not many reports have been made on the aggressive utilization of strain ef-fects. In fact, strain has been restricted to compressive strain in the InGaAs well layer [11][12][13] and, in particular, nothing has been reported on strained SLs with a large miniband width that is important for multifunctionality, because it has been difficult to grow high-quality InGaAs/͑Al͒GaAs thin barrier SLs because of the critical layer thickness problem. 14 In this paper, we report the first observation of the WSL effect in strained barrier short-period SLs with a large miniband width ͑about 190 meV͒ by using strained barrier GaAs/InAlAs SLs.…”

Section: Introductionmentioning

confidence: 99%

Wannier–Stark localization in strained barrier GaAs/InXAl1−XAs superlattices

Tominaga¹,

Hosoda²,

Watanabe³

et al. 1996

Journal of Applied Physics

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Articles you may be interested inRapid collapse of Wannier-Stark localization caused by space charge electric field screening in shortperiod superlattices Growth and characterization of midinfrared InGaAs/InAlAs strained triplequantumwell lightemitting diodes grown on latticemismatched GaAs substrates Room temperature excitonic transitions and electrooptical bistability in strained In x Ga1−x As/Al0.15Ga0.85As multiple quantum wells AIP Conf.We report the observation of the Wannier-Stark localization effect in short period GaAs/ In X Al 1ϪX As superlattices with strained barriers. The superlattices, each of which is contained in the intrinsic region of a p-i-n diode structure, consist of GaAs ͑3.0 nm͒ wells and strained shallow In X Al 1ϪX As ͑0.9 nm͒ barriers ͑Xϭ0, 0.1, 0.2, and 0.3͒ grown on GaAs by molecular beam epitaxy. In spite of the use of strained barriers, the Wannier-Stark localization effect is clearly observed for all samples at room temperature. Even the superlattice sample with the highest In content of Xϭ0.3 exhibits distinct photocurrent spectra showing several peaks associated with Wannier-Stark ladder transitions as well as Franz-Keldysh oscillations. It is found that the transition intensities are consistent with theoretically calculated oscillator strengths based on the simplified tight-binding model. By increasing the In content X, the miniband width increases and the absorption peak energy due to the zeroth order ladder ͑e1-hh1 and e1-lh1͒ transitions decreases because of the reduced barrier height. The transition energies are consistently explained by taking modulation effects into account on the valence subbands due to the compressively strained barriers. The above results show that the use of a large strain effect on the barriers is possible in Wannier-Stark localization effect type devices.

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4.3.3 InAs and In{1-y}Ga{y}As

Klingshirn¹

Landolt-Börnstein - Group III Condensed Matter

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Wannier–Stark localization in a strained InGaAs/GaAs superlattice

Abstract: Optically multistable operation of a waveguide device based on the Wannier-Stark effect in an InGaAs/InP superlattice Appl.

Cited by 11 publications

References 9 publications

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Wannier–Stark localization in strained barrier GaAs/InXAl1−XAs superlattices

4.3.3 InAs and In{1-y}Ga{y}As

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