Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Liu, Gang; Xu, Can; Yakshinskiy, B. V.; Wieluński, L.S.; Gustafsson, T.; Bloch, J.; Dhar, Sarit; Feldman, L. C.

doi:10.1063/1.4901719

Cited by 3 publications

(1 citation statement)

References 25 publications

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“…HfO 2 , HfO 2 /SiO 2 [15], ZrO 2 [16], Al 2 O 3 [17], AlN [18], and Ta 2 O 5 [7,19]) as well as post-oxidation treatments have been investigated. Another crucial issue for MOS capacitors, especially those operating under extreme conditions, is the reliability of gate dielectrics [20]. However, the performance of MOS devices in SiC is strongly limited by a poor interface quality between the oxide and SiC [21].…”

Section: Introductionmentioning

confidence: 99%

A new 4H-SiC hydrogen sensor with oxide ramp termination

Pascu

Kusko

Crǎciunoiu

et al. 2016

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

A new 4H-SiC hydrogen sensor with oxide ramp termination

Pascu

Kusko

Crǎciunoiu

et al. 2016

Materials Science in Semiconductor Processing

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Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), (0001¯), and (112¯) surfaces

Liu

Yakshinskiy

et al. 2015

Applied Physics Letters

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We report results on deuterium absorption on several oxidized 4H-SiC surfaces following D2O vapor absorption. Absorption at the oxide/semiconductor interface is strongly face dependent with an order of magnitude more deuterium on the C-face and a-face than on the Si-face, in contrast to the bulk of the oxides which show essentially no face dependence. Annealing in NO gas produces a large reduction in interfacial deuterium absorption in all cases. The reduction of the positive charge at the interface scales linearly with the interface D content. These results also scale with the variation in interface trap density (Dit) and mobility on the three faces after wet oxidation annealing.

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Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Liu

Tuttle

Dhar

2015

Applied Physics Reviews

258

136

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A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

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Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Cited by 3 publications

References 25 publications

A new 4H-SiC hydrogen sensor with oxide ramp termination

A new 4H-SiC hydrogen sensor with oxide ramp termination

Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), (0001¯), and (112¯) surfaces

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

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