Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

Liu, Jifeng; Beals, Mark; Pomerene, Andrew; Bernardis, Sarah; Sun, Renren; Cheng, Jing; Kimerling, Lionel C.; Michel, Jürgen

doi:10.1038/nphoton.2008.99

Cited by 501 publications

(301 citation statements)

References 24 publications

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“…The use of slow light in photonic crystal WGs has been also investigated for the reduced size of Si EO modulators [74]. Another approach to realize optical modulators is to use EA effect in Ge such as Franz-Keldysh effect (FKE) [69,75] and quantum-confined Stark effect (QCSE) [68,76]. In both cases, the optical absorption edge is shifted towards the longer wavelength under high electric fields (typically, >10 kV/cm).…”

Section: Low-power Optical Modulatorsmentioning

confidence: 99%

“…This corresponds to the length of modulator as small as 10 µm, being effective to reduce the energy consumption. For Ge pin structure on Si, the modulator operation around 1.6 µm has been reported [78,79], while shorter wavelength operation around 1.55 µm has been achieved using wider-gap GeSi alloys with a few percent of Si [69,75]. The use of SiN x stressor to compensate the tensile strain in Ge was also examined for the operation around 1.55 µm [80].…”

Section: Low-power Optical Modulatorsmentioning

confidence: 99%

“…The use of SiN x stressor to compensate the tensile strain in Ge was also examined for the operation around 1.55 µm [80]. GeSi waveguide modulators with the length as small as 50 µm showed an energy consumption as small as 50 fJ/bit, the operation spectrum width as large as 14 nm, and the operation speed more than 1 Gbps [75]. In QCSE devices, Ge quantum wells sandwiched by GeSi barriers are used [76].…”

Section: Low-power Optical Modulatorsmentioning

confidence: 99%

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Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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Section: Low-power Optical Modulatorsmentioning

confidence: 99%

Section: Low-power Optical Modulatorsmentioning

confidence: 99%

Section: Low-power Optical Modulatorsmentioning

confidence: 99%

See 1 more Smart Citation

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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“…In 2008, Ge showed initial promise in using FKE for modulation with only 50 fJ/bit of energy consumption. 6 Since then, Ge-based FKE modulation has achieved 12.5 Gb/s modulation, a 3 dB bandwidth of 30 GHz with only 100 fJ/bit of energy consumption in an integrated Si waveguide architecture. 7 In 2005, QCSE was first demonstrated in Ge/SiGe quantum wells 8,9 with initial results showing the possibility of modulation.…”

Section: Introductionmentioning

confidence: 99%

Indirect absorption in germanium quantum wells

et al. 2011

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Germanium has become a promising material for creating CMOS-compatible optoelectronic devices, such as modulators and detectors employing the Franz-Keldysh effect (FKE) or the quantum-confined Stark effect (QCSE), which meet strict energy and density requirements for future interconnects. To improve Ge-based modulator design, it is important to understand the contributions to the insertion loss (IL). With indirect absorption being the primary component of IL, we have experimentally determined the strength of this loss and compared it with theoretical models. For the first time, we have used the more sensitive photocurrent measurements for determining the effective absorption coefficient in our Ge/SiGe quantum well material employing QCSE. This measurement technique enables measurement of the absorption coefficient over four orders of magnitude. We find good agreement between our thin Ge quantum wells and the bulk material parameters and theoretical models. Similar to bulk Ge, we find that the 27.7 meV LA phonon is dominant in these quantum confined structures and that the electroabsorption profile can be predicted using the model presented by Frova, Phys. Rev., 145 (1966)

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“…S ilicon photonics has made great strides in developing a wide range of devices [1][2][3][4][5][6][7][8][9][10][11][12][13] . Built upon these advances, this technology now offers a low-cost platform for building large-scale optical systems [14][15][16][17] .…”

mentioning

confidence: 99%

High-density waveguide superlattices with low crosstalk

et al. 2015

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Silicon photonics holds great promise for low-cost large-scale photonic integration. In its future development, integration density will play an ever-increasing role in a way similar to that witnessed in integrated circuits. Waveguides are perhaps the most ubiquitous component in silicon photonics. As such, the density of waveguide elements is expected to have a crucial influence on the integration density of a silicon photonic chip. A solution to highdensity waveguide integration with minimal impact on other performance metrics such as crosstalk remains a vital issue in many applications. Here, we propose a waveguide superlattice and demonstrate advanced superlattice design concepts such as interlacing-recombination that enable high-density waveguide integration at a half-wavelength pitch with low crosstalk. Such waveguide superlattices can potentially lead to significant reduction in on-chip estate for waveguide elements and salient enhancement of performance for important applications, opening up possibilities for half-wavelength-pitch optical-phased arrays and ultra-dense space-division multiplexing.

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Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

Cited by 501 publications

References 24 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Indirect absorption in germanium quantum wells

High-density waveguide superlattices with low crosstalk

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