Waveguide Photodiode (WGPD) with a Thin Absorption Layer

Park, Jeong‐Woo

doi:10.5772/7145

Cited by 5 publications

(2 citation statements)

References 6 publications

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“…Here we expand the usage of the DAE molecules for optical ANNs to waveguide systems, by depositing a DAE film on a reverse symmetry waveguide (with a higher refractive index of the upper cladding as compared to the bottom cladding). With this structure the penetration depth of an evanescent field, which is excited by the total internal reflection of the guided light, increases up to several micrometers into the upper cladding [39,40]. The larger penetration depth enables the evanescent field to interact with the molecules, which are not deposited in the direct vicinity of the waveguide.…”

Section: Introductionmentioning

confidence: 99%

Reversible training of waveguide-based AND/OR gates for optically driven artificial neural networks using photochromic molecules

Rhim

Ligorio

Hermerschmidt

et al. 2021

J. Phys. D: Appl. Phys.

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Artificial neural networks (ANNs) are inspired by the biological nervous system. The high performance of such ANNs is achieved through the dynamic change of the synaptic weights by applying self-optimizing learning algorithms. Despite the simple operations for each single element in an ANN, a network with a huge number of simulated elements consumes lots of computing capacity using von Neumann computer architectures. To overcome this issue, neuromorphic devices facilitate the design of hardware ANNs that emulate the synaptic functions. Here we demonstrate the viability of such an approach using photonic waveguides in combination with a photochromic diarylethene (DAE) molecule. By positioning and irradiating DAE molecules on single waveguides, we modulate the intensity and thereby emulate the plasticity of the synaptic weights. To run the photonic device as an ANN we firstly characterize the modulation range and encode a learning procedure accordingly. As the proof of concept, we operate a y-shaped waveguide performing basic AND/OR logic gate functions, with the capability to switch between these two gate functions by using specific training sets.

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Section: Introductionmentioning

confidence: 99%

Reversible training of waveguide-based AND/OR gates for optically driven artificial neural networks using photochromic molecules

Rhim

Ligorio

Hermerschmidt

et al. 2021

J. Phys. D: Appl. Phys.

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“…For edge-illuminated photodiodes, a high responsivity of 0.7-1 A/W, with a thin (30 nm) absorption layer and a thick cladding layer, has been previously reported. 6) Therefore, the 24-nm InAs QD layer can potentially increase the edge-illuminated responsivity with a large absorption coefficient. In the wavelength range from 1510 to 1630 nm, we could achieve a measured spectral responsivity of 0.48 A/W at 1550 nm without an antireflection (AR) coating, as shown in Fig.…”

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confidence: 99%

Investigation of a 1.5-µm-wavelength InAs-quantum-dot absorption layer for high-speed photodetector

Umezawa

Akahane

Kanno

et al. 2014

Appl. Phys. Express

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We investigated a 1.5-µm-wavelength InAs-based quantum-dot (QD) absorption layer for high-speed and high-sensitivity photodetectors in advanced optical-fiber communications. The photodetector, which contained 20 stacked absorption layers of InAs/InGaAlAs QDs using the strain-compensation technique, exhibited a high absorption coefficient, avalanche multiplication effect, and a low dark current. It could operate at a low bias voltage for a p-type–intrinsic–n-type (PIN) diode structure. We expect that the 3-dB bandwidth at a low bias voltage would be approximately 50 GHz, and that the gain and bandwidth product in the avalanche multiplication region would be 150 GHz at a high bias voltage.

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Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Umezawa

Akahane

Yamamoto

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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We have fabricated a high-density 1.5-μm quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 × 10 12 cm −2 , which consisted of strained 1.5-μm InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.

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Waveguide Photodiode (WGPD) with a Thin Absorption Layer

Cited by 5 publications

References 6 publications

Reversible training of waveguide-based AND/OR gates for optically driven artificial neural networks using photochromic molecules

Reversible training of waveguide-based AND/OR gates for optically driven artificial neural networks using photochromic molecules

Investigation of a 1.5-µm-wavelength InAs-quantum-dot absorption layer for high-speed photodetector

Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

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