Wavelength-Division-Multiplexing Devices in Thin SOI: Advances and Prospects

Okamoto, K.

doi:10.1109/jstqe.2013.2291623

Cited by 63 publications

(33 citation statements)

References 46 publications

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“…The spectral shift ∆λ is related to the local effective index variation ∆n c and the group index of the waveguide n g by Eq. 2 [124]: The effective index variation ∆n c in SOI waveguide due to changes in thickness is ∼5.5 times larger than for the SiN waveguides (see Fig. 3 (a) and Fig.…”

Section: The Case Of Dispersive Spectrometers In Soimentioning

confidence: 86%

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Rahim

Ryckeboer

Subramanian

et al. 2017

J. Lightwave Technol.

276

158

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Abstract-The high index contrast silicon-on-insulator platform is the dominant CMOS 1 compatible platform for photonic integration. The successful use of silicon photonic chips in optical communication applications has now paved the way for new areas where photonic chips can be applied. It is already emerging as a competing technology for sensing and spectroscopic applications. This increasing range of applications for silicon photonics instigates an interest in exploring new materials, as silicon-oninsulator has some drawbacks for these emerging applications, e.g. silicon is not transparent in the visible wavelength range. Silicon nitride is an alternate material platform. It has moderately high index contrast, and like silicon-on-insulator, it uses CMOS processes to manufacture photonic integrated circuits. In this paper, the advantages and challenges associated with these two material platforms are discussed. The case of dispersive spectrometers, which are widely used in various silicon photonic applications, is presented for these two material platforms.

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Section: The Case Of Dispersive Spectrometers In Soimentioning

confidence: 86%

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Rahim

Ryckeboer

Subramanian

et al. 2017

J. Lightwave Technol.

276

158

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“…Such high-density waveguide superlattices with fine pitches can help to significantly enhance device performance/ functionality and/or reduce device area and cost. For example, in wavelength multiplexers/demultiplexers based on echelle gratings 25,26 , a key performance metric, the wavelength resolution between adjacent channels (Dl), is proportional to the pitch of the input/output waveguide array and scales inversely with the overall device size 25 . Using a sub-micrometre-pitch waveguide superlattice at input/output can result in salient improvement of wavelength resolution, which would otherwise require a device occupying a significantly larger area.…”

Section: Discussionmentioning

confidence: 99%

“…Note that in many applications such as wavelength (de)multiplexers 20,40,41 , spectrometers and optical-phased arrays 25,26 , the number of waveguides in the input/output arrays can be fairly large. The superlattice approach can reduce crosstalk for a large number of waveguides whereas the prior approach applies only to two waveguides.…”

Section: Discussionmentioning

confidence: 99%

“…Waveguide arrays are among the cornerstones of such systems. For example, waveguide arrays are widely used in emerging applications such as optical-phased arrays [18][19][20][21] , space-division multiplexing 22 and chip-scale optical interconnects 23,24 , and conventional applications such as wavelength-division multiplexers 25,26 . On the other hand, a waveguide array or a waveguide lattice can also be viewed 27 as fully analogous to a periodic chain of atoms, which lends itself to a broad spectrum of fascinating scientific possibilities ranging from Anderson localization of light 28,29 to parity-time symmetric effects 30 .…”

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confidence: 99%

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High-density waveguide superlattices with low crosstalk

et al. 2015

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Silicon photonics holds great promise for low-cost large-scale photonic integration. In its future development, integration density will play an ever-increasing role in a way similar to that witnessed in integrated circuits. Waveguides are perhaps the most ubiquitous component in silicon photonics. As such, the density of waveguide elements is expected to have a crucial influence on the integration density of a silicon photonic chip. A solution to highdensity waveguide integration with minimal impact on other performance metrics such as crosstalk remains a vital issue in many applications. Here, we propose a waveguide superlattice and demonstrate advanced superlattice design concepts such as interlacing-recombination that enable high-density waveguide integration at a half-wavelength pitch with low crosstalk. Such waveguide superlattices can potentially lead to significant reduction in on-chip estate for waveguide elements and salient enhancement of performance for important applications, opening up possibilities for half-wavelength-pitch optical-phased arrays and ultra-dense space-division multiplexing.

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“…All four AWGs show a good channel uniformity. The performance of these 2-µm-wavelength-range AWGs is comparable with state-of-the-art SOI AWGs at classical telecommunication wavelengths [13]. …”

Section: Passive Awg Wavelength Demultiplexersmentioning

confidence: 83%

III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

et al. 2016

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2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (−30 to −25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches. Adiabatic-taper-based photodetectors show a responsivity of 1.6 A/W at 2.35 µm wavelength and dark current of 10 nA at −0.5 V, while photodetectors using grating-assisted coupling have a responsivity of 0.1 A/W and dark current of 5 nA at −0.5 V. The integration of the photodetector array does not degrade the insertion loss and crosstalk of the device. The photodetector epitaxial stack can also be used to realize the integration of a broadband light source, thereby enabling fully integrated spectroscopic systems. µm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror," Appl. Phys. Lett. 85(14), 2697-2699 (2004).

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Wavelength-Division-Multiplexing Devices in Thin SOI: Advances and Prospects

Cited by 63 publications

References 46 publications

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits

High-density waveguide superlattices with low crosstalk

III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors

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