Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination

Extended wavelength SWIR InGaAs focal plane array: Characteristics and limitations

“…c o m / l o c a t e / i n f r a r e d material for the MBE growth of these detector structures [8]. Several studies have been reported on extended InGaAs detectors grown by GSMBE with graded InAlAs buffer layer [7,8,[10][11][12]. Low reverse bias (10 mV) dark current density (290 K) of 10.5 mA/cm 2 and R 0 A product of 0.94 X-cm 2 (290 K) were reported on 300 lm diameter mesa type InGaAs detectors with room temperature cut-off wavelength of 2.66 lm [8].…”

“…It was also observed that the dark current was bulk (not surface) generated [1,4]. More promising growth techniques for high uniformity (over a large area) such as Metal Organic Chemical Vapor Deposition (MOCVD) and Gas Source Molecular Beam Epitaxy (GSMBE) were also employed for the growth of extended InGaAs detector epilayers with graded InAsP and InAlAs buffer layers [6][7][8][9][10][11][12][13][14]. MOCVD grown planar detectors with an absorber doping density of 5 Â 10 16 cm À3 yielded dark current density as low as 1 nA/cm 2 at 150 K [6].…”

Gas Source MBE Grown Wavelength Extending InGaAs Photodetectors

“…Wavelength extending InGaAs PDs grown on InP by using GSMBE (e.g. : Zhang et al, 2008a, 2009a, 2009b, Tian et al, 2008bWang et al, 2009;Li et al, 2010;Gu et al, 2010) methods with different type of InAlAs buffer and cap layer structures have been reported, and their performances were well evaluated. These types of PDs even have been grown on GaAs substrate with even higher mismatch (e.g.…”

2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique

“…A number of methods have been adopted to achieve ternary InGaAs with high indium composition on InP substrates, including dilute bismides, e.g. quaternary InGaAsBi [2] and graded InAlAs metamorphic buffers [3,4]. The former has successfully demonstrated InGaAsBi SWIR detectors with the cut-off detection wavelengths up to 2.1 µm, but the difficulty in bismuth incorporation in InGaAs makes it challenging to further extend the detection wavelength.…”