Semiconductor lasers have several advantages compared to other types of lasers (a fiber ring laser, a solid-state laser, a gas laser), such as compactness, integrability to other components (a modulator, a power monitor photodiode, a wavelength tuning component). In addition, a monolithic tunable laser can be fabricated in the semiconductor by combining wavelength tuning regions and a phase control region together with an active region. That is why a monolithic integrated semiconductor tunable laser is very attractive not only for a compact light source for large-capacity, optical communication systems but also for economical backup resource. However, there are several technical issues to achieve high-quality semiconductor tunable lasers applicable to high-density optical communication systems due to the severe requirements of narrow spectral linewidth, wide tunability, and high wavelength stability.In this chapter, several technical methodologies for improving spectral linewidth and wavelength tunability are overviewed.
Requirements to Spectral LinewidthFor realization of large-capacity and long-haul WDM optical transmission systems, significant distortion by both chromatic and polarization mode dispersion should be overcome. For that solution, modulation scheme with narrow signal bandwidth is the recent trends. For example, multi-level modulation format, such as DQPSK and M-QAM, and multi-carrier modulation, such as OFDM, have been intensively investigated. For these modulation schemes, high-sensitive receiver is necessary, and therefore, transmission signal is detected with digital coherent detection technique. Therefore, even for a tunable semiconductor laser, narrow spectral linewidth