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We have successfully fabricated vertical light-emitting devices by separating a 1 × 1 cm2 wafer composed of deep-ultraviolet light-emitting diode (LED) on a sapphire substrate from the substrate using a laser liftoff (LLO) method. Reproducible substrate separation was achieved by the LLO method using an Al0.68Ga0.32N underlayer film on an AlN template with periodic pillars. The fabricated vertical LED successfully demonstrated notable luminescence (peak wavelength: 298 nm) characteristics up to a current density of ~43 kA cm−2 at room temperature and in pulsed drive, which is expected to be used in high-power LEDs and laser diodes.

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